WMSIC Electronic Components

FUXINSEMI BZT52B7V5

ModelBZT52B7V5
PackageSOD-123
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI BZT52B7V5
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
BZT52B7V5
Electronic Component
1
Package
SOD-123
Electronic Component
Zener Diode
Electronic Component
0.033g
Electronic Component
1
(Zzt)
30Ω
Electronic Component
BM0257330012
Diode
1
Current(Ir)
500nA@4V
Power Dissipation(Pd)
500mW
Electronic Component
7.35V~7.65V
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BZT52B7V5 稳压二极管(SOD-123)产品概述

一、产品简介

BZT52B7V5 是一款独立式低功耗稳压二极管,标称稳压值为 7.5V,典型稳压范围 7.35V ~ 7.65V,适用于小信号电路的基准和过压保护。由 FUXINSEMI(富芯森美)提供,采用 SOD-123 表面贴装封装,器件设计用于在低电流和低功耗场景下提供稳定的参考电压或钳位保护。

二、主要电气参数

  • 标称稳压值(VZ):7.5V(稳压范围 7.35V ~ 7.65V)
  • 反向漏电流(Ir):500 nA @ 4V(表示在低于稳压区的反向偏压下漏电流非常小,利于高阻抗电路)
  • 阻抗(Zzt):30 Ω(动态阻抗,表示在规定测试条件下的小信号交流阻抗,直接影响稳压精度)
  • 耗散功率(Pd):500 mW(器件在良好散热条件下的最大耗散功率)
  • 工作结温范围:-55℃ ~ +150℃(宽温区,适合多种环境工作)

注意:Pd 与实际可通过器件持续耗散的功率受 PCB 铜面与环境温度影响,设计时应进行热裕量计算。

三、封装与安装要点

BZT52B7V5 采用 SOD-123 小型 SMD 封装,具有体积小、便于表贴组装的优点。安装时应注意:

  • 极性识别:通常有阴极标识(条纹),电路图中按标注安装;阴极接负极/地或电源回路的相应端。
  • 焊接工艺:兼容常规回流焊工艺,请遵循 PCB 制造商或 IPC 焊接规范,避免超过封装允许的峰值回流温度或过长热暴露时间。
  • 热管理:SOD-123 的散热能力有限,若长时间较大电流运行,应通过增加铜箔面积或散热通孔改善热阻,避免结温超过额定值。

四、典型应用场景

  • 基本基准电压源:用于小电流电路中的参考电压。
  • 过压或浪涌钳位:保护敏感元器件免受瞬态过电压。
  • 信号调理与偏置电路:提供稳定偏置电压,尤其在仪表与低速模拟电路中。
  • 消费电子、通信及仪器仪表等需要低泄漏与小体积稳压的场合。

五、设计与使用建议

  • 电流限制与功耗计算:最大理论直流电流 Iz_max ≈ Pd / VZ = 0.5W / 7.5V ≈ 66.7 mA(理想条件)。实际应用中应留有热裕量并受限于封装散热,推荐连续工作电流远低于此值(例如 20–30 mA 级别或更低),具体值视 PCB 散热条件而定。
  • 串联限流:做分流稳压时使用串联电阻 Rs,可按公式 Rs = (Vin - VZ) / Iz_target 计算;同时检查限流电阻与稳压二极管的功率承受。示例:若 Vin = 12V,目标 Iz = 20 mA,则 Rs ≈ (12 - 7.5) / 0.02 = 225 Ω,二极管耗散功率 ≈ 7.5V × 0.02A = 0.15W(低于 Pd)。
  • 动态阻抗影响:Zzt = 30 Ω 表明在电流变化时电压仍会有一定波动,若需更高精度,应选择低阻抗型号或采用稳压芯片/参考源。
  • 低电压漏电:在低偏压下(如 4V)漏电仅 500 nA,适合高阻抗回路,但在需要极低噪声或超低漂移参考的场合还需评估温漂与噪声特性。
  • 降噪与稳定:在稳压二极管并联电容(例如 0.1 μF 至若干 μF 的陶瓷/电解电容)可改善瞬态响应和抑制高频噪声,但注意并联电容可能引起某些电路中的瞬态振荡问题,按需试验确定最优值。

六、可靠性与选型注意事项

  • 温度与老化:器件标称工作结温上限为 +150℃,长期工作应避免频繁高温循环以延长寿命。
  • 规格确认:采购时查看完整数据表,确认测试条件(如稳压测试电流 Iz、温度点、漏电测试电压等),以确保参数满足具体应用。
  • 应用级别:若用于汽车或工业严苛环境,需确认器件是否具备相应可靠性认证(如 AEC-Q101);若无,则限于一般工业或消费电子用途。

总结:BZT52B7V5(SOD-123)适合要求体积小、漏电低、功耗中等的稳压或钳位场合。在设计中应综合考虑动态阻抗、最大耗散功率与封装散热能力,通过合适的限流、散热与旁路措施保证长期稳定工作。

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