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FUXINSEMI BSS138
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI BSS138
- Type
- FUXINSEMI
- Minimum package
- 3000 卷
Technical parameters
- Electronic Component
- FUXINSEMI
- Electronic Component
- BSS138
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0230032093
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 50V
- Capacitor(Ciss)
- 27pF
- Resistor(RDS(on))
- 6Ω@4.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS138 产品概述
一、产品简介
BSS138 是一款面向小信号开关与电平转换的 N 沟增强型场效应管（MOSFET），由 FUXINSEMI（富芯森美）提供，采用 SOT-23 小封装。器件最大漏源耐压 50V，适合低功耗、低电流的开关和电平移位场合。典型封装尺寸和低引脚寄生参数使其在便携设备、接口逻辑和微功率电路中得到广泛应用。
二、主要电气参数（基于所给规格）
- 漏源耐压（Vdss）：50V
- 连续漏极电流（Id）：约 220mA（短时、良好散热下可接近 340mA）
- 导通电阻（RDS(on)）：6Ω @ Vgs = 4.5V
- 功率耗散（Pd）：350mW（SOT-23 封装，受 PCB 散热影响较大）
- 阈值电压（Vgs(th)）：1.5V @ Id = 1mA
- 输入电容（Ciss）：27pF，反向传输电容（Crss/Coss）：6pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
- 品牌：FUXINSEMI（富芯森美）
三、电气参数意义与工程解读
- Vgs(th)≈1.5V 表明在 1.5V 左右开始导通，适合 1.8V~5V 逻辑电平控制，但在较低驱动电压下导通阻抗会较高。
- RDS(on)=6Ω（Vgs=4.5V）提示此器件更适合做信号级开关或小电流负载切换，不宜用于大电流功率路径。
- Ciss 与 Crss 值较小（27pF / 6pF），切换速度快、米勒效应小，有利于高频开关或作为电平移位晶体管。
- Pd=350mW 限制了在 SOT-23 封装下的连续功耗能力，实际允许电流依赖 PCB 铜箔面积与散热条件，须注意结壳温升。
四、典型应用场景
- 逻辑电平转换（例如 1.8V ↔ 3.3V、3.3V ↔ 5V 的双向电平移位）
- 微控制器 I/O 的小电流开关与驱动
- 信号复位/复用开关、低频直流电源断路控制（小于数百 mA）
- 便携设备、电池供电系统中作为低泄漏、低寄生电容的开关元件
五、选型与使用注意事项
- 若负载电流接近或超过几十到一百毫安，建议评估 RDS(on) 带来的压降与功耗；对高电流场合选择 RDS(on) 更低的功率 MOSFET。
- 在 SOT-23 封装上，Pd 与电流受 PCB 散热影响显著；通过增加铜箔面积或使用散热通孔可以提升持续电流能力。
- 驱动电压越高导通阻抗越低，但应避免超出器件允许的门极电压（参考厂商完整资料）。
- Crss 值影响开关时的米勒效应，如用于高速切换，注意门极驱动和阻尼设计，避免振铃或误触发。
六、总结建议
BSS138（FUXINSEMI，SOT-23）凭借 50V 耐压、小寄生电容与低门限特性，是构建小信号开关和电平移位电路的实用器件。在选用时需关注 RDS(on) 与功耗限制，合理布线与散热设计可保证稳定工作。对需更大电流或更低导通阻抗的场合，应考虑替代的大功率 MOSFET。
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