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FUXINSEMI ZMM55C5V1
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI ZMM55C5V1
- Type
- FUXINSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- ZMM55C5V1
- Electronic Component
- 1
- Package
- LL-34(SOD-80)
- Electronic Component
- Zener Diode
- Electronic Component
- 0.052g
- Electronic Component
- 1
- (Zzk)
- 550Ω
- (Zzt)
- 60Ω
- Electronic Component
- BM0264480209
- Diode
- 1
- Current(Ir)
- 5uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 4.8V~5.4V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ZMM55C5V1 产品概述
一、产品概述
ZMM55C5V1 是一款独立式稳压二极管（稳压值标称 5.1V），由 FUXINSEMI（富芯森美）提供，封装为 LL-34（SOD-80）轴向小型封装。该器件设计用于在反向击穿区提供稳定电压参考与钳位保护，适合低功耗、小体积电源与信号电路中的基准或保护应用。
二、主要电气参数
- 标称稳压值：5.1V（允许范围 4.8V ~ 5.4V）
- 最大耗散功率 Pd：500mW（常温、无额外散热条件下）
- 最大反向电流 Ir：5 μA（视测试条件而定）
- 低电压时典型漏电流：100 nA @ 1V（典型值）
- 动态阻抗：Zzt ≈ 60 Ω（测试工况下低频动态阻抗）
- 膝点阻抗：Zzk ≈ 550 Ω（接近击穿开始区的阻抗特性）
基于 Pd 与 Vz 的简单估算，理论最大稳压电流 Iz_max ≈ Pd / Vz ≈ 98 mA，但长期稳态建议按热析与寿命考虑进行降额（见下文建议）。
三、封装与物理特性
封装为 LL-34（SOD-80）轴向小封装，体积小、便于穿孔安装或手工焊接，适合小批量原型与低功率产品。该封装热阻相对较高，器件在高电流工作时需要注意散热与环境温度。
四、典型应用场景
- 电源轨旁路与过压钳位保护
- 小电流基准电压源（如模拟前端、传感器供给）
- 参考电压与比较器阈值设置
- 抗瞬态浪涌与信号线保护
五、使用与选型建议
- 串联限流电阻：典型接法为电源 → 串联电阻 R → 二极管（反向） → 地。R = (Vin - Vz) / Iz，根据所需稳压电流计算；建议长期工作 Iz ≤ 30–50 mA 以降低功耗与热应力。
- 热管理：在接近最大耗散时需考虑 PCB 散热或额外热沉，避免长时间接近 Pd 极限。
- 精度与稳定性：器件标称 5.1V，但存在 4.8–5.4V 范围，若需高精度基准请选用低阻抗、温补的专用基准源或配套温度补偿措施。
- 环境与安全：在高温或高湿环境中应注意封装老化与漏电流上升，储存与使用遵守厂商静电防护与焊接规范。
六、可靠性与注意事项
- 建议查看厂方完整数据手册以确认测试条件（Iz、Ta、测量点）与温度系数。
- 焊接时避免长时间高温加热导致封装或内芯损伤；如使用波峰/回流焊，遵守推荐温度曲线。
- ESD 敏感器件，装配与调试过程需做好静电防护。
总体而言，ZMM55C5V1 以其小体积、适中的功率耗散与典型低漏电特性，适合在低至中等电流的稳压与保护场合使用；实际设计时应结合功耗计算与散热方案，按需留有安全裕度。
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