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FUXINSEMI BC817-25 BC817
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI BC817-25
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- BC817-25
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0228045243
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC817-25 产品概述 — FUXINSEMI（富芯森美）
一 性能亮点
BC817-25 为 NPN 小信号/功率耦合三极管，主要参数如下：集电极电流 Ic=500mA，集射极击穿电压 Vceo=45V，最大耗散功率 Pd=300mW（SOT-23 封装），直流电流增益 hFE≈160（测试条件：Ic=100mA，Vce=1V），特征频率 fT≈100MHz，集电极截止电流 Icbo≈100nA，饱和电压 VCE(sat)≈700mV。工作结温范围 -55℃ 至 +150℃（Tj）。
二 电气与频率特性
该器件在中等电流区具有较高的增益（hFE≈160），在开关和高频小信号放大中表现良好（fT≈100MHz），适合需要一定增益与频率响应的驱动与放大场合。低漏电流（Icbo≈100nA）有利于静态功耗控制和高阻抗电路的稳定性。
三 封装与热管理
BC817-25 采用 SOT-23 小封装，适合集成度高的表贴应用，但由于封装限制，耗散功率 Pd=300mW 受 PCB 热阻影响较大。实际使用中应注意焊盘面积与铜箔散热、器件间距和环境温度，必要时进行功率降额（derating）以保证长期可靠性。
四 典型应用
- 小信号开关、继电器/继电器驱动初级级驱动
- 低功率电源与稳压器的误差放大或驱动段
- 音频前级放大、信号缓冲
- 通信模块、高速逻辑接口中用于放大或驱动的场合
五 选型与使用建议
在设计时建议：
- 严格控制集电极电流不超过 500mA 峰值，并考虑持续工作时的降额；
- 使用合适的基极限流电阻，避免基极过驱或热失控；
- 对于高频应用注意寄生电容与印制板布局；
- 需更高功率或更低饱和压时，可考虑并联或选用更大封装器件。具体电气特性、引脚定义与测试条件请参阅富芯森美官方数据手册。
六 总结
BC817-25（FUXINSEMI）在 SOT-23 封装下提供了 45V 耐压、500mA 电流能力与较高的增益和频宽，适合空间受限、对增益和频率有一定要求的通用开关与放大应用。设计时应关注热管理与工作点设置，以确保稳定可靠。
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