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FUXINSEMI MBRS360T3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MBRS360T3G
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MBRS360T3G
- Electronic Component
- 1
- Package
- SMC(DO-214AB)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0230032095
- Current
- 3A
- Diode
- Electronic Component
- Current(Ir)
- 30uA@60V
- (Vf)
- 630mV@3A
- Electronic Component
- 65℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBRS360T3G 产品概述
一、产品简介
MBRS360T3G 是富芯森美（FUXINSEMI）推出的一款独立式肖特基屏蔽二极管，封装为 SMC（DO-214AB），专为中低电压、高效率整流和保护场合设计。该器件在 3A 工作电流条件下正向压降仅约 0.63V，反向耐压可达 60V，兼具低损耗与良好可靠性，适用于多种电源与功率管理应用。
二、主要参数
- 正向压降 (Vf)：0.63V @ If = 3A
- 直流反向耐压 (Vr)：60V
- 直流整流电流 (If)：3A（连续）
- 反向漏电流 (Ir)：30μA @ 60V
- 非重复峰值浪涌电流 (Ifsm)：125A（单次脉冲）
- 工作结温范围：-65℃ ~ +175℃
- 封装：SMC (DO-214AB)；独立式器件，便于通孔或散热布局
三、关键特性与优势
- 低正向压降：在中大电流工作点能显著降低导通损耗，提高转换效率，特别适合降压/升压电源、整流桥和输出整流。
- 低反向漏电：60V 条件下仅 30μA 漏电，利于提高待机效率并减少热失控风险。
- 强抗冲击能力：125A 的峰值浪涌能力可应对开机或故障瞬态电流，增强系统可靠性。
- 宽温工作范围：-65℃ 至 +175℃ 的结温范畴满足严苛工业与汽车电子环境（需配合适当热管理）。
- 肖特基特性：反向恢复电荷极小，适合高频整流与开关电源中的快速自由轮回与续流应用。
四、典型应用场景
- 开关电源（SMPS）输出整流或副边整流
- DC-DC 转换器（降压/升压）整流与续流二极管
- 汽车电子和工业电源的反向保护、极性保护与浪涌抑制
- 电池充放电管理、太阳能逆变器及冗余电源路径
- 高频整流与低压大电流应用场合
五、封装与热管理建议
SMC（DO-214AB）封装具有良好的功率散热能力，但在连续 3A 级别工作时仍需注意 PCB 散热设计：增大焊盘铜箔面积、使用过孔导热至底层散热层，并靠近散热体或铝基板布置。对于频繁浪涌或高环境温度，应考虑额外的热沉或降低额定工作电流以保证长期可靠性。
六、选型与使用注意
- 当系统工作电压接近 60V 或存在高温环境时，应留有足够的余量，必要时选择更高 Vr 规格产品。
- 若需并联以增加电流能力，应做好电流均流设计，避免单只过流导致失效。
- 对于敏感信号路径或极低漏电要求场合，需核对具体漏电随温度变化的曲线并进行系统级评估。
- 注意符合焊接工艺温度曲线，避免过热损伤封装或焊接失效。
总体而言，MBRS360T3G 以其低 Vf、低 Ir、较高浪涌能力及宽温特性，是中低压高效率整流与保护电路的可靠选择。在实际设计中，配合合理的散热与电气裕度，可获得优异的功率密度与长期稳定性。
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