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FUXINSEMI B5819W
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI B5819W
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- B5819W
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.034g
- Electronic Component
- 1
- Electronic Component
- BM0227636307
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 1mA@40V
- (Vf)
- 900mV@3A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
B5819W 产品概述
一、产品简介
B5819W 是富芯森美（FUXINSEMI）推出的一款肖特基势垒二极管，采用 SOD-123 小封装，适用于对体积与开关速度有要求的通用整流和保护场合。器件设计兼顾低正向压降与快速恢复特性，适合移动电源、DC-DC 转换器、逆向保护及浪涌吸收等应用。
二、主要参数
- 工作结温范围：-55℃ ~ +125℃
- 额定整流电流（IF）：1A（连续）
- 正向压降（Vf）：900mV @ 3A
- 直流反向耐压（Vr）：40V
- 反向电流（Ir）：1mA @ 40V
- 非重复峰值浪涌电流（Ifsm）：9A（单次脉冲）
- 封装：SOD-123
三、关键特性与优势
- 低正向压降：在高电流脉冲条件下仍能维持较低 Vf，有利于降低功耗与发热。
- 快速响应：肖特基结构使得开关损耗和反向恢复时间极小，适合高频切换场景。
- 封装紧凑：SOD-123 体积小、适合高密度 PCB 布局。
- 良好浪涌承受能力：9A 单次浪涌能力，可应对启动或短时过载情况。
四、典型应用场景
- DC-DC 转换器输出整流与续流二极管
- 电源反接保护与过电压吸收
- 电池充放电管理与逆向防护
- LED 驱动与便携式设备电源方案
五、封装与散热注意事项
SOD-123 封装散热能力有限，建议在 PCB 上配备适当的铜箔散热区并使用多个过孔或热铜铺层以降低结温。在高环境温度或持续接近额定电流的工况下，应适当降额运行以保证长期可靠性。有关热阻（RθJC / RθJA）与焊接工艺参数，请参照富芯森美详尽的器件数据手册。
六、设计与使用建议
- 反向电流较大：Ir=1mA@40V 在高温下会进一步增加，若应用对待机漏电敏感，应考虑选用低漏电型号或加并联控制方案。
- 浪涌与重复脉冲：Ifsm 为非重复脉冲等级，不建议用于频繁大幅浪涌工况。
- PCB 布局：输入/输出走线尽量短且厚，减少寄生电感；为热量分散设计足够铜面积。
- 焊接与可靠性：遵循厂家回流温度曲线，避免超温或长时间高温暴露，以免影响封装和焊点可靠性。
七、器件选型建议
若系统要求更低正向压降或更小反向泄漏，可考虑更大封装或更低 Vf 的肖特基替代品；若持续电流需求超过1A，应选用更高额定电流封装或并联多只器件，并注意均流与热管理。最终选型以系统温度、效率与可靠性要求为准，并结合富芯森美官方数据手册进行验证与仿真。
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