WMSIC Electronic Components

FUXINSEMI PESD5V0L2BT

ModelPESD5V0L2BT
PackageSOT-23(TO-236)
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI PESD5V0L2BT
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
PESD5V0L2BT
Electronic Component
1
Package
SOT-23(TO-236)
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
60pF;30pF
Voltage
8.5V
Electronic Component
BM0226574440
Operating Temperature
55℃~+125℃
Voltage
12V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD5V0L2BT 产品概述

PESD5V0L2BT 是富芯森美(FUXINSEMI)推出的一款双路双向瞬变电压抑制(ESD)二极管,专为 5V 及以下高速信号线及接口的静电与瞬态浪涌保护而设计。器件采用 SOT-23 小封装,集成两路保护通道,兼顾体积、性能与布板便利性,适合移动设备、消费电子、工业控制等对抗静电干扰有较高要求的场景。

一、主要特性

  • 双向保护,适用于双极性瞬态(正负极)冲击。
  • 额定工作电压(Vrwm):5V,适配 USB、TTL、I/O 等 5V 信号线。
  • 钳位电压:典型 12V,能在瞬态期间将线路电压限制在安全范围内。
  • 峰值脉冲电流 Ipp:30A,瞬时吸收大电流冲击能力强。
  • 峰值脉冲功率 Ppp:360W(按标准脉冲条件测量)。
  • 低漏电流 Ir:典型 1 μA,在无瞬态时对系统静态功耗影响微小。
  • 宽工作温度范围:-55℃ ~ +125℃,适应严苛环境。
  • 小体积 SOT-23 封装,便于自动贴装与高密度 PCB 布局。

二、关键电气参数

  • 反向截止/稳态工作电压 Vrwm:5V
  • 击穿电压(Vz):约 8.5V
  • 钳位电压(Vclamp):约 12V(取决于脉冲幅度与测试条件)
  • 峰值脉冲电流 Ipp:30A(标准脉冲)
  • 峰值脉冲功率 Ppp:360W
  • 反向漏电流 Ir:1 μA(典型)
  • 结电容 Cj:约 60 pF 和 30 pF(两路通道典型值,依测试条件略有差异)

三、封装与通道说明

  • 封装:SOT-23(TO-236)小型三引脚封装,节省 PCB 面积。
  • 通道数:双路(两路可用于两根独立信号线的保护或一对差分信号)。
  • 极性:双向,适合差分/双向数据线(如 USB D+/D- 等)。

四、典型应用场景

  • USB 接口(含 USB2.0/USB1.1)及其他 5V I/O 保护。
  • 手机、平板、笔记本等消费类电子设备的数据口防护。
  • 工业控制设备的通信接口、传感器线缆接口防护。
  • 串行总线与控制信号线(I2C、UART、SPI 等)防静电干扰。

五、选型与使用注意

  • 若保护高速差分信号,请优先关注结电容与通道不对称性对信号完整性的影响;PESD5V0L2BT 两路结电容分别约 60 pF 与 30 pF,应根据具体信号速率评估。
  • 钳位电压与系统容忍度匹配:钳位在 12V 左右,需确保被保护器件在瞬态期间不会因短时高压损坏。
  • 布局建议:保护二极管应尽可能靠近被保护器件或接口引脚放置,走线短且粗以降低电感引起的过压。接地回路短且直接,以提高能量散逸效率。
  • 若需更高能量吸收能力或更低电容版本,可参考同家族其它型号或并联保护策略(需评估等分电流问题)。

六、可靠性与合规性

  • 工作温度范围 -55℃ 至 +125℃,适合消费与工业级应用。
  • 符合 IEC 61000-4-2 ESD 抗扰度要求(具体通过级别请参见厂方完整测试报告)。
  • 器件低漏电与高脉冲吸收能力,能在长期使用中保持稳定保护性能。

总结:PESD5V0L2BT 在小体积 SOT-23 封装中提供了双路、双向、低漏电、高吸收能量的 ESD 保护解决方案,适合 5V 类信号及接口的静电防护场合。选型时应综合考虑结电容对高速信号的影响、钳位电压与系统容忍度以及 PCB 布局,以获得最佳防护效果。若需详细电气曲线、典型波形及评价条件,请参考富芯森美官方 Datasheet 或联系供应商获取完整测试资料。

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