WMSIC Electronic Components

FUXINSEMI BAS316

ModelBAS316
PackageSOD-323
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI BAS316
Type
FUXINSEMI
Minimum package
3000 卷

Technical parameters

Electronic Component
FUXINSEMI
Electronic Component
BAS316
Electronic Component
1
Package
SOD-323
Electronic Component
Switch Diode
Electronic Component
0.026g
Electronic Component
1
Electronic Component
BM0230032091
Current
250mA
Diode
1
Current(Ir)
1uA
(Vf)
1.25V@150mA
Power Dissipation(Pd)
250mW
Electronic Component
55℃~+150℃@(Tj)
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAS316 产品概述

BAS316 是富芯森美(FUXINSEMI)推出的一款小封装高速开关二极管,采用 SOD-323 封装设计,适用于对速度、漏电和耐压有要求的信号切换与保护场景。器件在微小体积下提供 100V 的反向耐压、低正向压降以及仅 4ns 的反向恢复时间,适合便携设备、通信接口与高频开关电路等应用。

一、基本特性

  • 器件类型:高速开关二极管(Switching Diode)
  • 正向压降 (Vf):1.25 V @ IF = 150 mA
  • 直流反向耐压 (Vr,VRRM):100 V
  • 最大整流电流(平均正向电流):250 mA
  • 耗散功率 (Pd):250 mW
  • 反向电流 (IR):1 µA @ 75 V(典型测试条件)
  • 反向恢复时间 (Trr):4 ns(快速恢复,适合高频开关)
  • 非重复峰值浪涌电流 (Ifsm):2 A(一次性浪涌能力)
  • 工作结温范围 (Tj):-55 ℃ ~ +150 ℃
  • 封装:SOD-323(小型表面贴装)

二、主要功能与优势

  • 低正向压降:在 150 mA 工作点下 Vf ≈ 1.25 V,减少功耗与发热,对中小电流信号路径友好。
  • 高耐压与低漏电:100 V 的反向耐压结合 1 µA 的低漏电流,可在较高偏压下保持良好隔离性能,适用于高压侧的信号保护。
  • 快速恢复:4 ns 的 Trr 使其适用于开关频率较高的场合,如脉冲信号处理与开关电源的小信号路径。
  • 小型封装:SOD-323 体积小,适合紧凑型电路板和高密度贴片设计。

三、典型应用场景

  • 信号开关与整流:用于低至中等电流的快速整流和开关信号路径。
  • 反向极性保护与防反接电路:对电流需求不大的线路可作为极性保护元件使用。
  • 保护与限压:用作钳位或浪涌吸收的快速响应元件,保护后级敏感电路。
  • 通信与接口电路:高速数据线防护、接口保护电路、逻辑电平钳位。
  • 便携与消费电子:体积与能耗受限的设备中用于电源管理和小信号整流。

四、封装与热管理

  • SOD-323 为小型表面贴装封装,便于自动化贴装,但其散热能力有限。
  • 器件 Pd = 250 mW,在持续工作时应注意热量管理;在高环境温度或连续较大电流情况下需要降额使用。
  • 推荐在 PCB 布局中增大焊盘铜量以改善结到环境的散热,避免长时间在接近 Pd 极限的工况下运行。
  • 对于脉冲型或瞬态大电流(Ifsm 之外的重复脉冲),应评估芯片温升并设计适当的热裕度。

五、布局与电路使用建议

  • 将二极管尽可能靠近被保护的引脚或信号源放置,以缩短回路长度、降低寄生电感和环路面积,从而提升开关性能与抗干扰性。
  • 在高频开关或脉冲路径中,注意阻抗匹配与旁路电容的配置,避免因为寄生参数引起振铃或过冲。
  • 对于需要更高连续电流的应用,应选择大封装或热性能更好的型号;BAS316 适用于 250 mA 级别的连续电流。
  • 焊接工艺请参考厂商建议的回流曲线,遵循 SMD 焊接规范,避免过热导致器件损伤。

六、可靠性与注意事项

  • 遵守静电防护(ESD)措施,尤其是在拆装与测试环节。
  • 器件在高温环境中漏电和功耗特性会随温度上升,设计时需考虑器件在温升情况下的降额系数(具体降额曲线请参见厂家原始资料)。
  • 非重复峰值浪涌电流为 2 A,属于一次性浪涌能力,在设计中不应依赖该参数作为常态工作电流。
  • 推荐按实际应用场景进行可靠性测试(温度循环、热冲击、浪涌测试等),确保长期稳定性。

七、规格摘要

  • 型号:BAS316(FUXINSEMI / 富芯森美)
  • 封装:SOD-323
  • Vf:1.25 V @ 150 mA
  • VR:100 V
  • IR:1 µA @ 75 V
  • IF(AV):250 mA
  • Pd:250 mW
  • Trr:4 ns
  • Ifsm:2 A(非重复峰值)
  • 工作温度:-55 ℃ ~ +150 ℃

BAS316 以其高耐压、低漏电、快速恢复和小型封装的组合,适合多种便携与通信类的信号保护及开关应用。选型与最终设计应结合实际工作电流、功耗和热环境进行评估,必要时参考富芯森美提供的完整数据手册以获取详细的热特性与封装信息。

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