WMSIC Electronic Components

FUXINSEMI BAT54C

ModelBAT54C
PackageSOT-23(TO-236)
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI BAT54C
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
BAT54C
Electronic Component
1
Package
SOT-23(TO-236)
Electronic Component
Schottky Diode
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0230032089
Current
200mA
Diode
1
Current(Ir)
2uA
(Vf)
520mV@250mA
Electronic Component
55℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAT54C 产品概述

一、产品简介

BAT54C 是一款双路肖特基势垒二极管(common-cathode),由 FUXINSEMI(富芯森美)推出,封装为 SOT-23(TO-236)。该器件以低正向压降、快速切换和较小的反向漏电流为特点,适合移动设备、低压电源管理和信号整流等场景的保护与整流应用。

二、主要参数

  • 正向压降:Vf = 520 mV @ 250 mA(典型)
  • 反向耐压:Vr = 30 V
  • 连续整流电流:If = 200 mA
  • 反向漏电流:Ir = 2 μA(典型,常温)
  • 非重复峰值浪涌电流:Ifsm = 600 mA(脉冲)
  • 工作结温范围:Tj = -55 ℃ ~ +125 ℃
  • 封装:SOT-23(TO-236)
  • 品牌:FUXINSEMI(富芯森美)

三、电气与热特性说明

BAT54C 的正向压降在同类小信号肖特基中处于较低水平,有助于降低导通损耗和发热。不过 Vf 会随电流上升和温度变化而增加;在高电流条件下耗散显著,需关注封装热阻与PCB散热。2 μA 的反向漏电流适合低功耗场景,但漏电随温度呈指数上升,工作在高温时需考虑漏电带来的待机损耗。600 mA 的峰值浪涌能力适用于短时冲击,但仅限非重复或短脉冲,应参考详尽的浪涌曲线与脉宽限制。

四、封装与引脚说明

SOT-23 三引脚:通常为双二极管共阴结构,典型引脚分配为 Pin1:Anode1、Pin2:Cathode(公共)、Pin3:Anode2。SOT-23 封装体积小,适合高密度贴片应用。为获得更佳热性能,PCB 侧建议在焊盘周围留足铜箔并与大地或电源平面热耦合。

五、典型应用

  • 低压电源的肖特基并联(ORing)与反向保护
  • USB、数据线及输入端的浪涌与极性保护
  • 高频整流与快速开关电路中的检波器/混频器保护
  • 电平移位与信号夹位电路,降低电压降与串联损耗
  • 便携式与电池供电设备中用于降低功耗与温升

六、设计注意事项

  • 在靠近额定连续电流(200 mA)时,需做热仿真与实际温升测试;高温环境下应按热特性降额使用。
  • 反向漏电随温度上升显著,待机或高温应用应评估漏电影响。
  • 尽量缩短器件与负载间走线,减少寄生电感与热阻。
  • 峰值浪涌仅用于短时冲击,避免反复靠近 Ifsm 工作以防损伤。
  • 选择替代器件或并联方案时注意 Vf、Ir、封装热阻与可靠性参数一致性。

七、选型建议与替代

在要求更低正向压降或更高电流能力时,可考虑其它封装或型号(如更大封装的肖特基器件)。选择替代品时,应对比 Vf 曲线、Ir 随温度的变化、Ifsm 脉冲宽度限制以及封装热阻,确保在目标工作点下满足可靠性与寿命要求。

八、结语

FUXINSEMI 的 BAT54C 在 SOT-23 小型封装中提供了平衡的低压降、低漏电和短时浪涌能力,适合多种低压保护与整流应用。最终设计时建议结合完整数据手册的 Vf-I、Ir-T、热阻与脉冲曲线进行热与电性能验证,保证长期可靠运行。

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