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FUXINSEMI MMBT3904
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI MMBT3904
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- MMBT3904
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0228045242
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT3904 产品概述
一、产品简介
MMBT3904 是一颗小功率通用型 NPN 双极结晶体管，适用于开关与低功率放大电路。由 FUXINSEMI（富芯森美）提供的 SOT-23 小封装版本在体积、性能与成本之间取得平衡，常用于便携式和高密度电路板设计。该器件在 40V 集电极-发射极击穿电压和 200mA 的集电极电流能力下，兼顾了良好的增益与高频特性，适合多种通用电子应用。
二、主要参数
- 晶体管类型：NPN
- 集电极电流（Ic）：200mA（最大）
- 集-发击穿电压（Vceo）：40V
- 功耗耗散（Pd）：200mW
- 直流电流增益（hFE）：300 @ Ic=10mA, Vce=1V
- 特征频率（fT）：300MHz
- 集电极截止电流（Icbo）：100nA
- 集射极饱和电压（VCE(sat)）：300mV
- 工作温度范围：-55℃ ～ +150℃
- 封装：SOT-23
- 品牌：FUXINSEMI（富芯森美）
三、特性与优势
- 高增益：在 10mA 工作点下 hFE 可达 300，便于在小电流条件下实现较大放大倍数，利于前级放大与偏置设计。
- 高频性能良好：fT 达到 300MHz，支持射频及高速开关场景（需根据具体电路条件评估）。
- 低泄漏：Icbo 典型值 100nA，适合低静态功耗要求的电路。
- 低饱和压：VCE(sat) 约 300mV（在规定的 Ib/Ic 条件下），有利于开关效率和电平转换。
- 小体积封装：SOT-23 便于表面贴装，利于自动化组装与高密度布局。
四、典型应用
- 通用开关电路（逻辑电平驱动、负载开关）
- 小信号放大（前置放大、音频放大低功率级）
- 高速开关与脉冲电路
- 电平转换、驱动 MOSFET 或继电器的小电流驱动
- 便携式设备及消费电子的通用接口电路
五、封装与热管理
SOT-23 小封装便于表贴，但热阻较大，200mW 的耗散能力依赖于环境温度和电路板的散热条件。在实际电路设计中，应考虑：
- 尽量使用足够的铜箔散热，以及接地平面或散热岛；
- 避免长期在高电流、高频下连续工作以防器件过热；
- 在靠近高温源或密封空间中设计时保留温升裕量。
六、使用注意事项
- 最大额定值（Ic、Vceo、Pd）不可作为长期工作点，推荐留有裕度以提高可靠性；
- 高频应用需注意寄生电容、引线电感对增益与相位的影响，必要时增加阻尼或匹配网络；
- SOT-23 引脚排列和焊盘尺寸请参照厂商具体数据手册，装配前核对封装标识。
七、检索与替代建议
MMBT3904 在市场上为常见型号，若需替代请对比关键参数（Vceo、Ic、hFE、fT、Pd 及封装引脚）。实际替换前建议阅读 FUXINSEMI 的完整数据手册并进行器件级测试，以确保在目标应用中性能与可靠性满足要求。
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