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FUXINSEMI RB751S40T1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI RB751S40T1G
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- RB751S40T1G
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM0227636314
- Current
- 30mA
- Diode
- Electronic Component
- Current(Ir)
- 500nA@30V
- (Vf)
- 370mV@1mA
- Electronic Component
- 40℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
RB751S40T1G 产品概述
一、产品概述
RB751S40T1G 是 FUXINSEMI（富芯森美）出品的一款独立式肖特基二极管，封装为 SOD-523，面向低电流、低压降的信号整流和保护场景。该器件在 1mA 条件下正向压降仅约 370mV，反向耐压 40V，整流电流 30mA，适合空间受限且对导通损耗敏感的小电流应用。
二、主要电气参数
- 正向压降 (Vf)：370mV @ IF = 1mA
- 直流反向耐压 (Vr)：40V
- 最大整流电流：30mA（连续）
- 反向电流 (Ir)：500nA @ Vr = 30V（典型温度条件下）
- 非重复峰值浪涌电流 (Ifsm)：200mA（瞬态）
- 工作结温度范围：-40℃ 至 +125℃
三、封装与标识
SOD-523 为超小型表贴封装，适合高密度 PCB。器件极性通常通过体上标记（阴极条）识别。由于封装体积小，热阻较大，长期大电流工作需注意散热和热降额。
四、典型应用场景
- 低功耗便携设备的信号整流与电平保护
- 电源轨反向保护与电源 OR-ing（低电流场合）
- 数据线、传感器接口的反向保护或钳位
- 光电/光伏微功率防回流阻断
五、设计注意事项与选型建议
- 由于 30mA 为连续整流上限，持续工作电流接近该值时需考虑温升与热降额；若应用存在较高环境温度或连续较大电流，应选用更大封装或更高电流等级器件。
- 反向漏电 Ir 会随温度上升显著增加，高温环境下需评估漏电对系统的影响。
- Ifsm 仅为非重复瞬态能力，不能替代真正的冲击/浪涌保护器件。
- SOD-523 焊接时按常规无铅回流曲线处理，并注意取样与贴装过程中的静电防护。
六、可靠性与环境适应
器件工作结温范围覆盖 -40℃~+125℃，满足多种工业与消费类环境。建议在可靠性设计中考虑温度对正向压降和反向漏电的影响，并在 PCB 设计中为热量扩散留出铜箔。
七、布板与实务建议
- 在 PCB 布局中将二极管布置靠近被保护管脚，缩短走线以减少寄生电阻与电感。
- 对于需要更低压降或更高电流的场合，优先考虑更大封装或并联（需注意电流均分问题）。
- 成品测试时测量 Vf、Ir 在工作温度范围内的表现，验证热稳定性。
八、总结
RB751S40T1G 是一款面向低电流、低压降需求的超小型肖特基二极管，适用于便携、信号保护与低功耗整流场合。选择时应综合考虑电流、散热与工作温度对漏电和正向压降的影响，以确保稳定可靠的系统表现。若需替代或扩展性能，请根据电流等级、漏电要求与封装约束进行对比选型。
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