WMSIC Electronic Components

HGSEMI LMV321AIM5/TR LMV321AIM5

ModelLMV321AIM5/TR
PackageSOT-23-5
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LMV321AIM5 / TR
Type
HGSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LMV321AIM5/TR
Electronic Component
1
Package
SOT-23-5
Electronic Component
Operational Amplifier
Electronic Component
0.08g
Electronic Component
1
Electronic Component
Output
Features
ESD; EMI / RF
Electronic Component
BM0264730027
Operating Temperature
40℃~+125℃
Amplifier
1
Output Current
40mA
(SR)
1V/us
Power Supply Voltage
1.8V~5.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LMV321AIM5/TR 产品概述

一、产品简介

LMV321AIM5/TR 是 HGSEMI(华冠)推出的一款通用单运算放大器,采用低功耗 CMOS 工艺,内置轨到轨输入与轨到轨输出(RRIO)特性,适配低电压单电源及双电源系统。器件在 1.8V~5.5V 单电源范围内稳定工作,具备出色的直流精度与低噪声特性,适合便携、传感器前端和精密仿真信号链等应用。

二、主要特点

  • 放大器数:1,单通道运放。
  • 最大电源宽度 (Vdd–Vss):5.5V;单电源工作:1.8V~5.5V。
  • 轨到轨输入与输出(RRIO),在允许的供电范围内实现最大输入/输出摆幅。
  • 增益带宽积(GBW):1.2MHz,适合低速滤波与驱动应用。
  • 压摆率(SR):1V/μs,支持中低速信号边沿响应。
  • 输入失调电压(Vos):典型 3mV,温漂(Vos TC)仅 1μV/℃,保证长时间及温度变化下的精度。
  • 输入偏置电流(Ib):5pA,输入失调电流(Ios):50pA,适合高阻抗传感器接口。
  • 输入电压噪声密度:30nV/√Hz @1kHz,低噪声,利于小信号放大。
  • 共模抑制比(CMRR):83dB,具有良好的共模噪声抑制能力。
  • 静态电流(Iq):典型 85μA,适合电池供电的低功耗系统。
  • 输出电流:最高可达 40mA,能驱动一般负载或后级电路。
  • 工作温度范围:-40℃ ~ +125℃。
  • 功能特性:内建 ESD 保护与 EMI 滤波 / RF 抑制,有利于抗干扰设计。
  • 封装:SOT-23-5,适配紧凑 PCB 布局与自动化贴装。
  • 型号与品牌:HGSEMI(华冠) LMV321AIM5/TR。

三、典型应用场景

  • 低功耗便携式设备的信号调理与放大。
  • 传感器前端(温度、压力、光电等)与高阻抗传感器接口。
  • 主动滤波器、缓冲放大器、精密参考和采样保持电路。
  • 电池管理与电压检测电路。
  • 抗干扰要求高的模拟前端,得益于器件的 EMI 抑制与 ESD 保护。

四、设计与使用建议

  • 电源去耦:为保证稳定性与最低噪声,建议在 Vdd 和 Vss 之间放置 0.1μF 陶瓷去耦电容,靠近封装焊盘布置。
  • 带宽与增益:1.2MHz GBW 适合低至中等闭环增益设计;在更高闭环增益下,注意相位裕量与环路稳定性。
  • 负载与驱动:器件最高输出电流可达 40mA,但连续大电流输出会增加功耗与发热,建议评估功率耗散与外部散热条件。
  • 输入与输出摆幅:虽然为轨到轨结构,但在接近电源轨时性能(失真、驱动能力)会有所变化,关键应用建议在电路仿真或评估板上验证。
  • 抗容性负载:与大电容负载直接驱动时可能影响稳定性,必要时在输出端并联小电阻或隔离缓冲网络。
  • ESD/EMI:内置保护有助于提升系统鲁棒性,但在强干扰环境下仍建议加装额外的输入滤波或共模抑制元件。

五、封装与订购信息

  • 封装形式:SOT-23-5(小尺寸、适合移动与空间受限应用)。
  • 型号示例:LMV321AIM5/TR(卷带包装,适合表面贴装生产线)。
  • 品牌:HGSEMI(华冠),提供工业温度等级支持(-40℃~+125℃)。

六、优势小结

LMV321AIM5/TR 以低功耗、低失调、轨到轨输入输出和良好的抗干扰特性为核心优势,适合要求小尺寸、长续航和高精度的模拟前端设计。其平衡的静态功耗与输出驱动能力,使其在便携设备与工业传感应用中具备良好性价比与可靠性。

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