WMSIC Electronic Components

HGSEMI LM386BN-1 LM386BN

ModelLM386BN-1
PackageDIP-8
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LM386BN-1
Type
HGSEMI
Minimum package
2000 管装

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LM386BN-1
Electronic Component
1
Package
DIP-8
Electronic Component
Audio Power Amplifier
Electronic Component
0.843g
Electronic Component
1
Electronic Component
BM0229355078
Operating Temperature
0℃~+70℃
Operating Voltage
4V~12V
Output Power
325mWx1@8Ω
Static Current(Iq)
4mA
Speaker Channel Count
Electronic Component
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM386BN-1 产品概述

LM386BN-1 是一款面向便携与低功率音频放大应用的单声道低电压功率放大器,华冠(HGSEMI)生产并以 DIP-8 直插封装提供。该器件在低电流消耗和简化外围电路方面具有显著优势,适合玩具、便携式收音机、微型音箱、前置放大器和教学实验等场景。

一、主要参数与性能亮点

  • 工作电压:4 V ~ 12 V,能够在常见电池与小型电源环境下稳定工作。
  • 工作温度:0 ℃ ~ +70 ℃,适用于一般室内及民用电子环境。
  • 静态电流 (Iq):4 mA(典型值),待机耗电低,适合电池供电设备。
  • 总谐波失真+噪声 (THD+N):0.2%,在典型输出范围内保持较低失真,保证音质清晰。
  • 电源纹波抑制比 (PSRR):50 dB,对电源噪声与纹波具备较好抑制能力,减少电源噪声对音频的影响。
  • 封装:DIP-8,便于面包板实验与通孔 PCB 设计。

二、功能特点

  • 低电压工作、低静态电流,适合便携设备与低功耗系统。
  • 内部增益设置为固定值(无外部增益元件时提供中等增益),并支持通过在引脚 1 与 8 之间连接电容或电阻-电容网络来显著增加或调节增益(最高可达较大增益值),方便灵活的增益控制。
  • 单电源工作且输出带直流偏置,通常需要输出耦合电容与扬声器串联以阻断直流分量。
  • 对电源抖动与纹波有较强抑制,适合电池或噪声存在的电源环境。

三、引脚功能简述(DIP-8)

  • 引脚1:增益设置(与引脚8配合使用)
  • 引脚2:反相输入(-)
  • 引脚3:同相输入(+)
  • 引脚4:地(GND)
  • 引脚5:输出(接扬声器通过耦合电容)
  • 引脚6:电源正(Vcc)
  • 引脚7:旁路(Bypass,用于接旁路电容以降低噪声)
  • 引脚8:增益设置(与引脚1配合使用)

四、典型外围电路与设计建议

  • 输入耦合:为避免直流偏置影响音源,输入通常通过耦合电容串联。耦合电容取值可在 0.01 μF ~ 10 μF 范围内选取,根据输入阻抗决定低频截止点(fc ≈ 1/(2π·Rin·Cin))。
  • 输出耦合:因单电源拓扑,输出需串联电解电容以隔直流,常用值在 100 μF ~ 470 μF(常见 220 μF)以保证低频响应。
  • 增益设置:默认内部增益适中;在引脚1-8并联 10 μF 电容可将增益显著提高;若需可调增益,可在两引脚间加并联电阻/电容组合。
  • 电源去耦:在 Vcc 与 GND 之间尽量在器件引脚附近放置 0.1 μF 陶瓷旁路电容,并建议并联 10 μF 电解电容以稳定电源、改善低频供电性能。
  • 旁路(Pin7):接 0.01 μF ~ 0.1 μF 到地能进一步降低噪声并提高稳定性,改善低频时的性能。

五、负载与热设计

  • 适配扬声器:常用负载为 8 Ω 或 4 Ω。输出功率受供电电压、负载阻抗及散热条件影响,设计时需依据实际电源和所需声压规划。
  • 热管理:器件静态功耗低,但在高功率输出下封装会产生较多热量。长期高电平驱动或在高环境温度时应考虑 PCB 散热面积或外加散热措施,避免热关断或长期可靠性问题。

六、应用场景

  • 便携式扬声器、迷你收音机、门铃及玩具音频放大
  • 教学与原型实验板(DIP-8 便于面包板试验)
  • 简单音频驱动与前置放大器场合,作为低成本、低零件数的音频解决方案

七、封装与采购信息

  • 品牌:HGSEMI(华冠)
  • 型号:LM386BN-1
  • 封装形式:DIP-8(直插)
  • 在选型与采购时,请参考华冠提供的详细数据手册以获得完整电气特性曲线、引脚排列图与应用参考电路,确保在目标工作条件下满足性能与温度要求。

总结:LM386BN-1 以其低电压、低静态电流、较低失真与良好 PSRR 特性,成为实现简洁、经济音频放大系统的常用选择。合理的外围元件选型与良好 PCB 布局能够发挥其最佳性能,满足众多民用与教育类音频应用需求。

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