WMSIC Electronic Components

HGSEMI LM211M/TR LM211M

ModelLM211M/TR
PackageSOP-8
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LM211M / TR
Type
HGSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LM211M/TR
Electronic Component
1
Package
SOP-8
Electronic Component
Comparator
Electronic Component
0.24g
Power Supply
5V~30V
Electronic Component
1
Electronic Component
BM0265070240
Operating Temperature
25℃~+85℃
Comparator
Electronic Component
Output
MOS;RTL;DTL;TTL;CMOS
(tr)
0.2us
Static Current(Iq)
2.4mA
(tpd)
200ns

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM211M/TR 产品概述

一、产品简介

LM211M/TR 是华冠(HGSEMI)出品的单路电压比较器,封装为 SOP-8。器件支持单电源工作电压 5V ~ 30V,或双电源 ±15V,最大电源差允许值为 36V。适用于需要宽电源范围、低偏移与较快响应的通用比较场合,封装及带卷装(/TR)选项方便表面贴装与量产装配。

二、主要性能参数

  • 比较器数:单路
  • 输入失调电压 Vos:700 μV(典型)
  • 输入偏置电流 Ib:1.7 nA
  • 输入失调电流 Ios:1.7 nA
  • 静态电流 Iq:2.4 mA
  • 传播延迟 tpd:200 ns
  • 响应时间 tr:0.2 μs
  • 输出兼容:MOS、RTL、DTL、TTL、CMOS(需外部上拉配置)
  • 工作温度范围:-25 ℃ ~ +85 ℃
  • 封装:SOP-8(/TR 表示卷带供应)

三、功能特点

  • 宽电源范围:单电源 5V~30V,或双电源 ±15V,适用于多种系统电源结构。
  • 低失调与低偏置电流:Vos 700 μV 和 Ib、Ios 约 1.7 nA,适合高精度阈值检测。
  • 快速响应:典型传播延迟 200 ns、响应时间 0.2 μs,适合中高速开关及脉冲处理。
  • 输出兼容多种逻辑家族:通过适当上拉电阻,可驱动 MOS/TTL/CMOS 等逻辑输入。
  • 低静态功耗:正常工作电流约 2.4 mA,有利于中低功耗系统设计。

四、典型应用

  • 电平检测与门限比较(过压/欠压检测)
  • 波形整形、零交叉检测与脉冲宽度判别
  • A/D 或计数器的窗口/门控电路前端
  • 逻辑电平电平移位与接口驱动(需上拉)
  • 振荡器、超前/滞环比较器电路(配合正反馈实现滞环)

五、设计与使用建议

  • 输出为开集电极/开漏兼容模式,需外接适当上拉电阻至目标逻辑电压,确保上拉电压 ≤ 最大电源差(36V)。上拉阻值根据负载与速度权衡选择。
  • 对于噪声边缘或抖动场合,建议在正反馈端增加适量滞环(正反馈电阻),以提高抗抖动性。
  • 输入端避免超出电源范围的电压,应加串联电阻或限流保护,必要时并联钳位二极管以防 ESD 或反向输入电压。
  • 电源引脚应使用旁路电容(如 0.1 μF 与 10 μF 并联)贴近封装走线,以减少瞬态干扰对比较精度与响应时间的影响。
  • 估算功耗时以静态电流 Iq 与工作电压乘积为参考(P ≈ Iq × Vcc),高电压条件下要注意封装散热条件。

六、封装与订购信息

  • 封装形式:SOP-8(标准小外形,无铅/有铅视具体料号)
  • 订货型号示例:LM211M/TR(“/TR” 常表示卷带包装,便于贴片生产)
  • 建议在最终产品设计与批量采购前,向华冠或授权分销商索取最新版数据手册以核准引脚定义、电气极限与封装信息。

以上为 LM211M/TR 的概述与实用设计要点,可作为快速选型与电路实现参考。

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