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HGSEMI LM358N
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI LM358N
- Type
- HGSEMI
- Minimum package
- 2000 盒
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- LM358N
- Electronic Component
- 1
- Package
- DIP-8
- Electronic Component
- Operational Amplifier
- Electronic Component
- 0.767g
- Electronic Component
- 1
- Features
- Built-in
- Electronic Component
- BM0227365045
- Operating Temperature
- 0℃~+70℃
- Amplifier
- 2
- Output Current
- 30mA
- Power Supply Voltage
- 3V~36V
- Static Current(Iq)
- 800uA
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LM358N 产品概述
一、概述
LM358N 是一款通用型双运算放大器，由华冠（HGSEMI）提供，封装为 DIP-8。器件支持宽电源电压，能在单电源或双电源工况下工作，适用于低功耗、低频放大与信号调理场合。器件输入电压范围宽、静态电流低，兼顾通用性与成本效益，常用于传感器前端、滤波器、信号缓冲与比较放大等系统。
二、主要技术参数
- 共模抑制比（CMRR）：80 dB
- 最大电源电压（VDD–VSS）：36 V
- 单电源工作范围：3 V ~ 36 V
- 双电源范围：VEE ~ VCC = −18 V ~ +18 V
- 输入失调电压（Vos）：典型 7 mV
- 输入偏置电流（IB）：约 250 nA
- 输入失调电流（IOS）：约 5 nA
- 增益带宽积（GBP）：1.2 MHz
- 静态电流（Iq）：约 800 μA（整片）
- 输出驱动电流：最大约 30 mA
- 工作温度范围：0 ℃ ~ +70 ℃
- 放大器通道数：双路（2/芯片）
- 封装：DIP-8
三、核心特性
- 宽电源范围，支持低压单电源系统（≥3 V），也可用于±18 V 的双电源。
- 低静态功耗，适合对功耗敏感的便携或长期运行系统。
- 输入偏置与失调较小，便于在精确信号放大场合减少误差。
- 增益带宽适于低频至中频放大，1.2 MHz GBP 适合音频、慢变传感信号处理。
- 输出驱动能力良好（约30 mA），能直接驱动小型执行器或LED负载，但高驱动场合需加外部驱动。
四、典型应用
- 传感器信号调理（温度、压力、光电等）
- 有源滤波与积分/微分电路
- 电平检测、比较放大（非高精度比较器）
- 仪表放大器前端（配合差分结构）
- 低速数据采集与缓冲放大
五、封装与实用建议
- 封装为 DIP-8，便于面包板原型开发与插座替换。
- 电源旁须并联去耦电容（如 0.1 μF 与 10 μF）以抑制电源噪声与瞬态。
- 对于高精度应用，建议在输入端使用短走线与屏蔽，并在必要处添加偏置与温漂补偿。
- 输出驱动接近极限电流时注意功耗与发热，必要时采用散热或外接功率放大级。
LM358N（HGSEMI/华冠）以其稳定的通用性能与易用性，适合教学、原型以及大量工业电子设备的低成本信号处理场合。
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