Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
HGSEMI AT24C04M5/TR AT24C04M5
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI AT24C04M5 / TR
- Type
- HGSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- AT24C04M5/TR
- Electronic Component
- 1
- Package
- SOT23-5
- Electronic Component
- EEPROM
- Electronic Component
- 0.044g
- Electronic Component
- 1
- Electronic Component
- BM0264336487
- Electronic Component
- 4Kbit
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 1.7V~5.5V
- Interface Type
- I2C
- Electronic Component
- 100
- Clock Frequency(fc)
- 1MHz
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AT24C04M5/TR 产品概述
一、产品简介
AT24C04M5/TR 为 HGSEMI（华冠）系列 4Kbit 串行 EEPROM，采用 SOT23-5 小封装，面向对体积、功耗和可靠性有较高要求的嵌入式存储应用。器件通过 I2C 总线通信，兼容标准 I2C 协议，最高时钟频率可达 1MHz，便于在高速控制系统中实现非易失性数据存取。
二、关键规格
- 存储容量：4Kbit（512 字节）
- 接口类型：I2C（双线，SDA/SCL）
- 时钟频率：最高 1MHz（快速/高速模式）
- 写周期时间（Tw）：典型 5ms（单次页面写入完成所需时间）
- 数据保留（TDR）：100 年
- 写入耐久性：100 万次写周期
- 工作电压：1.7V ~ 5.5V（宽电源范围，适配 1.8V/3.3V/5V 系统）
- 工作温度：-40℃ ~ +85℃
- 封装：SOT23-5
三、功能特性
- 硬件写保护：WP 引脚提供外部硬件写保护，支持对整个器件写入禁止，便于关键数据保护。
- 噪声抑制：内部滤波/抖动抑制机制，提升 I2C 总线抗干扰能力，减少误写入风险。
- 页写保护：支持页写功能和页级保护机制，可在单次写周期中高效写入多字节数据（典型页长 16 字节，具体以数据手册为准），提高总线利用率并降低平均写耗时。
四、设计与使用建议
- 拉电阻选择：推荐根据总线电容选择 1kΩ ~ 10kΩ 范围的上拉电阻，典型值 4.7kΩ；在接近 1MHz 时考虑使用更低阻值以满足上升时间要求。
- 电源与旁路：建议在 VCC 引脚附近放置 0.1µF 陶瓷旁路电容以抑制电源噪声。
- 写入控制：写操作后应等待 Tw 指定时间或读取器件状态（状态轮询）以确保写入完成。利用 WP 管脚可在系统关键时刻禁止写操作。
- 数据完整性：在高干扰环境中，可配合外部滤波或在协议层加入校验以进一步提升可靠性。
五、典型应用
- 参数/校准数据存储（传感器、测量仪表）
- 配置与序列号保存（消费电子、通信设备）
- 引导与安全标识存储（工业控制、物联网节点）
- 小型数据日志与状态记录
六、封装与订购信息
- 封装：SOT23-5 小体积封装，利于空间受限应用布局。
- 推荐型号：AT24C04M5/TR（HGSEMI 华冠），具体包装、温度等级与出货方式请参考官方数据手册与供应商报价单。
该器件以其宽电压、长数据保持、百万次写寿命及硬件写保护等特性，适合对可靠性及体积要求较高的嵌入式存储场景。更多电气参数、引脚说明与时序图请参见 HGSEMI 官方数据手册，以便在设计阶段进行精确匹配与验证。
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