WMSIC Electronic Components

HGSEMI LM285M3-2.5/TR LM285M3

ModelLM285M3-2.5/TR
PackageSOT-23-3
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LM285M3-2.5 / TR
Type
HGSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LM285M3-2.5/TR
Electronic Component
1
Package
SOT-23-3
Electronic Component
Voltage Reference IC
Electronic Component
±0.3%
Electronic Component
0.038g
Electronic Component
1
Electronic Component
BM0228150908
Operating Temperature
40℃~+85℃
Electronic Component
80ppm/℃
Output Voltage
2.5V
Output Current
20mA
Output Type
Electronic Component
(10Hz-10kHz)
120uVrms

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM285M3-2.5/TR 产品概述

一、产品简介

LM285M3-2.5/TR 为 HGSEMI(华冠)出品的小型固定电压基准芯片,封装为 SOT-23-3。器件提供 2.5V 固定基准输出,面向对体积、成本和温度稳定性有要求的精密模拟与测量场合。器件为固定型(non-adjustable)基准,结构简单、易于使用,适合集成在电源管理、ADC/DAC 参考、传感器偏置与电压监测等应用中。

二、主要性能参数

  • 输出电压:2.5 V(固定)
  • 精度:±0.3%(初始精度)
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 温度系数:80 ppm/℃
  • 最大输出电流:20 mA
  • 最小阴极(基准)调节电流:15 μA(保证进入调节区的最低电流)
  • 噪声(10 Hz – 10 kHz):60 μVrms
  • 封装:SOT-23-3
  • 品牌:HGSEMI(华冠)

三、性能理解与影响

  • 温漂与精度:温度系数 80 ppm/℃ 对应在全温度范围(-40 到 +85 ℃,ΔT=125 ℃)下的理论最大漂移约为 80 ppm/℃ ×125 ℃ ≈ 10000 ppm(约 1.0%),即对 2.5V 基准约 ±25 mV;与初始精度 ±0.3%(约 ±7.5 mV)叠加需在系统设计中一并考虑。
  • 噪声特性:10 Hz–10 kHz 带宽下 60 μVrms 的噪声水准适合常见中高分辨率 ADC,但对超高分辨率或低频精密测量建议加滤波或缓冲放大。
  • 电流要求:器件为分流(shunt)型基准,必须保证阴极(或参考输入)有不低于最小调节电流 15 μA 的偏置才能进入稳定工作区,同时不要超过最大输出电流 20 mA。

四、典型应用场景

  • 模数/数模转换器(ADC/DAC)的参考源
  • 模拟前端与传感器偏置(温湿度、压力、光电传感等)
  • 电池管理和电压监测模块
  • 精密比较与阈值检测电路

五、设计与使用建议

  • 偏置电流计算:当以分流方式使用时,选择串联限流电阻 R,应确保流经基准的电流 Iz 满足:R = (Vin - Vref) / (Iz + Iload),并使 Iz ≥ 15 μA 且 Iz + Iload ≤ 20 mA。
  • 去耦与滤波:建议在输出端并联近端 0.1 μF 陶瓷去耦电容以降低高频噪声;对低频噪声敏感的应用可使用 RC 或有源滤波器进一步抑制。
  • 布线与热管理:SOT-23-3 封装受限于小体积散热,布板时应尽量缩短引线,使用地平面并在器件周围留出散热铜箔以利散热,避免在高压差下长时间大电流工作导致过热。
  • 接地和测量:对高精度测量,参考引脚应采用 Kelvin(四端)手法或尽量靠近测量点布线,避免地电位差引入误差。

六、小结

LM285M3-2.5/TR 在 SOT-23-3 封装下提供了可靠的 2.5V 精密基准,具有较低噪声、较高初始精度和工业级温度范围,适用于多种体积受限且对成本敏感的精密模拟应用。设计时需关注偏置电流、温漂与封装散热限制,通过合理的去耦和布线可获得稳定、低噪的基准性能。

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