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HGSEMI ULN2803ADM/TR ULN2803ADM
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI ULN2803ADM / TR
- Type
- HGSEMI
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- ULN2803ADM/TR
- Electronic Component
- 1
- Package
- SOP-18-300mil
- Electronic Component
- Darlington Transistor Array
- Electronic Component
- 0.513g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Electronic Component
- BM0229275325
- Operating Temperature
- 40℃~+85℃
- Current(on)
- 0.93mA
- Current(off)
- 100uA
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
- Collector Current(Ic)
- 500mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ULN2803ADM/TR 产品概述
一、功能与概述
ULN2803ADM/TR 为八路达林顿晶体管阵列，适用于将低电平逻辑信号驱动较大电流或较高电压的负载。该器件由八组达林顿对组成，单片集成多通道，便于空间受限的系统实现多路驱动功能。厂商品牌：HGSEMI（华冠），常见封装为 SOP-18-300mil，便于焊接与 PCB 布局。
二、主要参数
- 通道数：8 路
- 集电极击穿电压 Vceo：50 V
- 集电极电流 Ic（最大）：500 mA（单通道）
- 最大输入电压 VI：30 V
- 工作温度范围：-40 ℃ 至 +85 ℃
- 集电极漏电流 Icex：20 μA（典型/最大项，请以数据手册为准）
- 输入电流（导通）Iin(on)：0.93 mA（典型）
- 输入电流（关断）Iin(off)：100 μA（典型/最大）
- 封装：SOP-18-300mil
三、关键特性
- 八路高密度集成，适合多通道驱动场景，节省 PCB 面积与设计成本。
- 较高的 Vceo（50 V）允许驱动较高电压的负载。
- 单通道最大 Ic 达 500 mA，适用于继电器线圈、小型步进电机与功率型 LED 等负载（需注意总功耗与热设计）。
- 低关断漏电（约 20 μA），有利于关断时减少泄漏影响。
- 输入端电流较小（导通约 0.93 mA），便于与 MCU/逻辑电平直连。
（注：ULN2803 系列器件常见特性还包括内置基极限流电阻与对感性负载的抑制二极管；是否包含请以具体厂商的器件数据手册为准。）
四、典型应用
- 工业与家电控制板上的继电器、步进电机驱动与电磁阀控制；
- LED/指示灯阵列驱动、显示模块的电流开关；
- 将 TTL/CMOS 等低电平信号接口级联至高压/高电流负载；
- 其他需要多路并行开关的场景，如安防、仪器仪表与外围模块。
五、封装与热管理
SOP-18-300mil 封装便于自动化贴片与手工焊接，但在高电流、连续工作情况下需重视热量积累与 PCB 散热设计。建议：
- 在高功率工况下提供充足的铜箔散热面积；
- 合理分配负载通道，避免单芯片多通道长时间满载；
- 必要时采用外置散热或降低占空比以控制结温。
六、使用建议与注意事项
- 使用前参考HGSEMI提供的数据手册，确认内置二极管与接线引脚定义。
- 对于感性负载，若器件未内置抑制二极管，应外接自由轮二极管或 RC 抑制网络以保护器件。
- 注意输入电平与最大输入电压（VI 30 V）限制，避免输入端过压。
- 评估系统级功耗与结温，必要时在 PCB 上设计热过孔与散热铜箔。
七、选型建议与替代
ULN2803ADM/TR 适合需要多通道中等电流驱动且对封装密度有要求的设计。若单通道电流或耐压需求更高，可考虑功率更大的分立器件或 MOSFET 驱动器；若需要更低导通压降或更高效率，可评估同类多通道 MOS 驱动器作为替代。选型时以实际电流、工作电压、开关频率与热预算为主。
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