WMSIC Electronic Components

HGSEMI AT24LC64M/TR AT24LC64M

ModelAT24LC64M/TR
PackageSOP-8
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI AT24LC64M / TR
Type
HGSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
AT24LC64M/TR
Electronic Component
1
Package
SOP-8
Electronic Component
EEPROM
Electronic Component
0.2g
Electronic Component
1
Electronic Component
BM0264336486
Electronic Component
64Kbit
Operating Temperature
40℃~+85℃
Operating Voltage
1.8V~5.5V
Interface Type
I2C
Electronic Component
100
Clock Frequency(fc)
1MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT24LC64M/TR 产品概述

一、产品简介

AT24LC64M/TR 是一款容量为64Kbit(8K字节)的串行 EEPROM,采用 I²C 总线接口,工作电压范围宽(1.8V ~ 5.5V),封装为 SOP-8,适用于多种低功耗、跨电压平台的数据存储需求。器件针对系统可靠性和抗干扰能力做了优化,内置硬件写保护和噪声抑制功能,适合在工业级温度范围内长期稳定工作。

二、主要规格一览

  • 接口类型:I²C(支持高达 fc = 1 MHz 的时钟频率,兼容标准模式、快速模式及快速模式+)
  • 存储容量:64 Kbit(8 KByte)
  • 写周期时间(Tw):典型 5 ms(单页写入完成时间)
  • 写周期寿命:1,000,000 次
  • 数据保留(TDR):100 年
  • 功能特性:硬件写保护(WP 引脚);噪声抑制(输入滤波/抗毛刺设计)
  • 工作电压:1.8 V ~ 5.5 V(单芯片可直接适配 1.8V / 3.3V / 5V 系统)
  • 工作温度:-40 ℃ ~ +85 ℃
  • 封装:SOP-8(通用 DIP 替代小间距封装,方便自动贴装)

三、功能特点与优势

  • 宽电压兼容:1.8V~5.5V 的设计使器件能在多种主控电压下无须电平转换即可工作,便于在不同平台间迁移设计。
  • 高耐久与长期保存:1,000,000 次写周期以及 100 年的数据保留能力,适合对数据完整性要求高的标识信息、校准参数、序列号等长期存储场景。
  • 硬件写保护:通过 WP 引脚实现对写操作的硬件锁定,便于在系统固件、自检或出厂状态下防止意外擦写。
  • 噪声抑制:器件内部具备针对 SCL/SDA 的噪声抑制或输入滤波,有助于降低总线毛刺导致的误写或错误应答,提升在电磁环境复杂场合的抗干扰能力。
  • 小型封装:SOP-8 封装适用于空间受限的 PCB 布局和批量生产加工。

四、典型应用场景

  • 工业控制与自动化:保存校准数据、配置参数、设备标识信息。
  • 通信设备:存储MAC、序列号、配置信息等。
  • 消费电子:设备设置、用户配置、固件参数备份。
  • 医疗与仪器:长期保存校准和设备历史记录。
  • 汽车电子(非汽车级需注意额外验证):可用于车载次级电子模块的数据备份。

五、设计注意事项与使用建议

  • 电源与去耦:在器件 VCC 引脚附近放置 0.1 μF 陶瓷去耦电容,靠近器件布置以降低电源噪声对读写稳定性的影响。
  • I²C 总线:SCL 与 SDA 需外接上拉电阻。根据总线速度与总线容量选择上拉阻值(常见 10 kΩ ~ 2.2 kΩ 范围;3.3V 系统常用 4.7 kΩ)。若总线频率接近 1 MHz,应适当减小上拉阻值以满足时序。
  • 写操作管理:单次写入建议按页边界对齐进行,以获得最高效率并尽量减少写循环次数。写周期 Tw 约 5 ms,写入后应等待写完成(可通过 ACK 查询或延时)再进行下一次写操作。
  • 写保护使用:通过 WP 引脚在需要时锁定写操作;系统设计时应明确该引脚的默认电平与上电状态,避免在关键场合留下未受保护窗口。
  • 噪声抑制提示:器件内部有抗毛刺设计,但在高 EMI 环境下仍建议做好 PCB 屏蔽与走线分离,减少 SCL/SDA 与高频噪声源平行走线;必要时在总线上加入小电容或 RC 滤波(需兼顾通信速率)。
  • 热管理与可靠性:工作温度范围为 -40 ℃ 至 +85 ℃,在高温或严苛环境下建议进行完整的系统级验证以确保长期稳定性。

六、封装与采购提示

AT24LC64M/TR 提供 SOP-8 封装,便于自动化贴装与波峰/回流焊处理。采购时请确认供货商为 HGSEMI(华冠)指定货号并留意批次与质量证书。对于量产项目,建议与供应链确认长期供货与器件追溯信息。

总结:AT24LC64M/TR 以其宽电压兼容、长期数据保留、高写入耐久性及抗干扰设计,适合需要可靠非易失性存储、跨电压平台兼容和工业级环境适应性的应用场景。在电源去耦、总线上拉、写操作管理与写保护的配合下,能为系统提供稳定可靠的 EEPROM 存储解决方案。

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