WMSIC Electronic Components

HGSEMI ULN2003AN

ModelULN2003AN
PackageDIP-16
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI ULN2003AN
Type
HGSEMI
Minimum package
1000 盒

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
ULN2003AN
Electronic Component
1
Package
DIP-16
Electronic Component
Darlington Transistor Array
Electronic Component
1.631g
Electronic Component
1
Channel Count
Electronic Component
Electronic Component
BM0264336357
Operating Temperature
40℃~+85℃
Current(on)
0.93mA
Current(off)
100uA
Electronic Component
Electronic Component
Electronic Component
1000
Collector Current(Ic)
500mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ULN2003AN 产品概述

一、产品简介

ULN2003AN 是一款高耐压、大电流的七路 NPN 达林顿阵列驱动器。器件将七个达林顿对集成在同一芯片内,共用发射极、开集电极输出,便于直接驱动继电器、步进电机、指示灯等外部负载。每一路内部串联 2.7kΩ 基极电阻,直接兼容 TTL 与 5V CMOS 电平,省去外部缓冲器或限流电阻的设计工作。

二、主要规格参数

  • 通道数:7 路达林顿阵列(开集电极输出)
  • 集电极-发射极耐压 VCEO:50V
  • 单通道最大集电极电流 Ic:500mA(推荐在封装和散热允许范围内工作)
  • 最大输入电压 VI:30V
  • 工作温度范围:-40℃ ~ +85℃
  • 集电极漏电流(关态)Icex:20µA
  • 输入电流(导通时):0.93mA(典型)
  • 输入电流(关断时):100µA(典型)
  • 内部基极电阻:约 2.7kΩ(每对达林顿)
  • 封装:DIP-16
  • 品牌:HGSEMI(华冠)

三、设计特点与优势

  • 高耐压设计:单通道在关态可承受高达 50V 的集电极-发射极电压,适用于多种较高工作电压场景。
  • 大电流驱动能力:单通道可处理最高约 500mA 的瞬时/连续负载,满足驱动中小功率继电器与电机的需求;多通道可并行以提升总输出能力。
  • 直接兼容逻辑电平:内置基极电阻使其可直接与 TTL 和 5V CMOS 输出接口连接,简化系统设计。
  • 封装易用:DIP-16 封装便于面包板和手工焊接测试与小批量生产。

四、典型应用场景

  • 继电器驱动与开关控制
  • 步进电机驱动的低端驱动级
  • 指示灯、发光二极管和小型直流电机驱动
  • 工业控制板、仪器仪表的多通道开集电极输出接口

五、使用与注意事项

  • 功耗与散热:达林顿结构本身存在较大的饱和压降,工作时会产生显著热量。长期高电流工作请做好散热设计并避免超过封装与环境温度限制。
  • 并行输出:若需更大电流,可考虑并联多通道,但应注意电流均衡和总体功耗,必要时在并联通道间增加小阻抗以改善分流。
  • 输入与关断电流:输入导通电流约 0.93mA,关断时输入泄漏约 100µA,系统接口设计时应考虑这些静态电流对驱动器与上游逻辑的影响。
  • 漏电流:单通道关态集电极漏电流典型为 20µA,关断负载可能出现微小漏流,适用于对漏电流敏感的场合应额外评估。
  • 工作电压上限:输入端最大耐压为 30V,集电极-发射极耐压为 50V,请勿超限使用以免损坏器件。

六、包装与采购信息

  • 型号:ULN2003AN
  • 品牌:HGSEMI(华冠)
  • 封装形式:DIP-16,适合原型验证与插件安装
  • 应在数据手册和样片测试的基础上进行最终设计验证,确保满足目标应用的电气与热性能要求。

如需更详细的数据曲线、封装引脚图或典型应用电路,可提供具体需求,我可帮助补充相应资料与设计建议。

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