WMSIC Electronic Components

HGSEMI AT24C16M5/TR AT24C16M5

ModelAT24C16M5/TR
PackageSOT-23-5
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI AT24C16M5 / TR
Type
HGSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
AT24C16M5/TR
Electronic Component
1
Package
SOT-23-5
Electronic Component
EEPROM
Electronic Component
0.043g
Electronic Component
1
Electronic Component
BM0233531965
Electronic Component
16Kbit
Operating Temperature
40℃~+85℃
Operating Voltage
1.7V~5.5V
Interface Type
I2C
Electronic Component
100
Clock Frequency(fc)
1MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT24C16M5/TR 产品概述

一、产品简介

AT24C16M5/TR 是华冠(HGSEMI)推出的一款串行 I2C EEPROM,存储容量为 16Kbit(2K 字节),面向需要非易失性参数存储、配置保存与少量程序或校准数据存储的嵌入式与消费类应用。器件采用 SOT-23-5 小封装,适合空间受限的 SMT 组装,/TR 型号通常以卷带(Tape & Reel)形式供货,方便大批量贴片生产。

二、主要特性

  • 接口类型:I2C(兼容标准 I2C 协议)
  • 存储容量:16Kbit(2048 字节)
  • 时钟频率(fc):最高可达 1MHz(支持高速 I2C 通信)
  • 工作电压:宽电压范围 1.7V ~ 5.5V,可直接用于 1.8V、3.3V 及 5V 系统
  • 写周期时间(Tw):典型 5ms(单页写或字节写完成所需时间)
  • 数据保留(TDR):典型 100 年
  • 写周期寿命:高耐久 1,000,000 次(适合高频写入场景)
  • 工作温度范围:-40℃ ~ +85℃(工业级)
  • 封装:SOT-23-5,适合小型化设计
  • 品牌:HGSEMI(华冠)

三、电气参数摘要(推荐关注)

  • 电源范围:1.7V 至 5.5V,支持低电压系统。
  • I2C 时序:最高支持 1MHz,总线设计请按 Fast-mode Plus(Fm+)规范进行。
  • 写保护与寻址:器件采用 I2C 标准寻址方式,具体地址位与页大小、寻址方式请参阅器件数据手册以获得确切信息。
  • 电源去耦:建议在 VCC 与 GND 之间增加 0.1μF 陶瓷旁路电容以滤除瞬态干扰。

四、封装与物料信息

  • 封装形式:SOT-23-5,小型化塑封,适合自动贴装与空间受限应用。
  • 供货形式:带“-/TR”后缀一般表示卷带包装(Tape & Reel),便于自动化贴片与产线使用。
  • 引脚排列与焊接:SOT-23-5 引脚间距与焊盘尺寸请依据封装工程图与 PCB 推荐焊盘设计,以保证良好回流焊接质量。

五、典型应用场景

  • 工业控制与测量仪表:保存校准系数、设定参数、历史计数等。
  • 消费电子:保存用户设置、配置信息、设备序列号。
  • 物联网与低功耗终端:在低电压下可靠工作,用于配置与状态恢复。
  • 医疗与仪表设备:可靠的数据保存和长期数据保留特性。
  • 汽车非安全关键子系统(请根据汽车等级与认证需求评估适用性)。

六、设计与使用建议

  • I2C 拉电阻:在 1MHz 总线下建议使用较小阻值的上拉电阻(如 2kΩ–10kΩ 取决于总线电容与 VCC),常见 3.3V 系统可采用 4.7kΩ;对于长线或高总线电容环境应适当减小阻值以保证上升时间。
  • 写操作管理:写操作需等待器件完成内部写入(典型 Tw = 5ms),可采用写完成轮询(ACK polling)或延时等待策略以提高效率。
  • 页写优化:器件支持页写操作以提升写入吞吐(减少每字节写入的总线开销),页边界写入需避免越页;页大小请参阅数据手册确定。
  • 断电与数据保护:在写周期内若系统可能断电,应在系统层面添加电源控制或写前检查机制,尽量避免在关键写入阶段断电。
  • 耐久与均衡写入:器件耐久高达 1,000,000 次,但对频繁写入热点地址可考虑软件层的写入平衡(wear leveling)以延长寿命并分散写入。

七、可靠性与质量保证

  • 数据保留 100 年的典型规格,适合长期存储配置/校准数据。
  • 工业级温度范围(-40℃ 至 +85℃),可用于多数严苛环境。
  • 高写入耐久(1,000,000 次)满足反复写入需求,适合需要频繁记录计数或状态的产品。
  • 生产与检测建议遵循华冠(HGSEMI)提供的数据手册与建议的 PCB 布局、焊接工艺与 ESD 防护措施。

八、小结

AT24C16M5/TR 以其 16Kbit 存储容量、宽电压兼容(1.7V–5.5V)、支持高达 1MHz 的 I2C 通信及工业级温度与高耐久特性,适用于各类需要可靠非易失性存储的嵌入式与消费类产品。设计时关注总线上拉、电源去耦、写周期管理与页写优化等要点,可确保器件在实际应用中发挥稳定而高效的性能。有关详细引脚定义、页大小、寻址方式与时序,请参考华冠 HGSEMI 的完整数据手册。

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