WMSIC Electronic Components

HGSEMI LM358AM/TR LM358AM

ModelLM358AM/TR
PackageSOP-8
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LM358AM / TR
Type
HGSEMI
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LM358AM/TR
Electronic Component
1
Package
SOP-8
Electronic Component
Operational Amplifier
Electronic Component
0.274g
Electronic Component
1
Electronic Component
BM0227636596
Operating Temperature
40℃~+85℃
Amplifier
2
Output Current
100mA
(SR)
700V/ms
Power Supply Voltage
2.7V~36V
Static Current(Iq)
1.2mA
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM358AM/TR 产品概述

一、主要特点

LM358AM/TR(华冠 HGSEMI)为双路低功耗运算放大器,面向单电源及双电源工业级应用。器件支持最大电源差宽达40V(单电源工作范围 2.7V ~ 36V;双电源 ±18V),封装为 SOP-8,TR 表示卷带(Tape & Reel)包装。器件注重低偏移、低偏置和较强的输出驱动能力,适合对成本、功耗与空间有平衡要求的通用放大场合。

二、关键参数说明

  • 放大器数:双路
  • 最大电源差宽 (Vdd−Vss):40V
  • 增益带宽积 (GBP):700 kHz(闭环增益为 N 时,带宽约为 700kHz/N)
  • 输入失调电压 (Vos):9 mV;温漂 Vos TC:7 μV/℃
  • 输入偏置电流 (Ib):500 nA;输入失调电流 (Ios):150 nA;Ios 温漂:10 pA/℃
  • 压摆率 (SR):700 V/ms(对快速电压转换有良好响应)
  • 共模抑制比 (CMRR):80 dB
  • 静态电流 (Iq):1.2 mA(典型)
  • 输出电流:最高 100 mA(短时驱动能力,长期注意热耗散)
  • 工作温度范围:−40℃ ~ +85℃
  • 封装:SOP-8(小型化、便于自动贴片)

示例:在闭环增益为 10 的缓冲或放大配置中,可用带宽约为 70 kHz(700 kHz / 10),用于音频带域及一般控制信号放大足够。

三、典型应用场景

  • 单电源模拟前端、传感器信号调理(因输入共模范围可接近负电源,便于地参考测量)
  • 低频滤波器、积分/微分电路、缓冲放大器
  • 仪表放大、数据采集前置放大、低速采样系统
  • 继电器驱动前级、简单比较或窗口检测(非高速比较器替代)

四、封装与引脚(SOP-8)

常见引脚排列(自左上角逆时针):

  1. 输出 A
  2. 反相输入 A
  3. 同相输入 A
  4. V−(Vss)
  5. 同相输入 B
  6. 反相输入 B
  7. 输出 B
  8. V+(Vdd)
    (请以实际器件引脚资料为准)

五、选型与设计要点

  • 电源与去耦:建议在 V+ 与 V− 近端并联 0.1 μF 陶瓷去耦,以抑制高频振铃。
  • 带宽考量:根据 GBP 估算闭环带宽,避免在增益较高时期待高速响应。
  • 偏置与漂移:Vos 9 mV 与温漂 7 μV/℃适合普通精度场合;高精度测量时考虑外部校准或后端校正。
  • 输出驱动与散热:器件可短时提供较大电流,但长时间大电流输出需考虑功耗与封装散热限制。
  • 包装与采购:型号 LM358AM/TR,HGSEMI(华冠)品牌,SOP-8 封装,TR 为卷带包装,便于SMT生产线使用。

总结:LM358AM/TR 提供了在宽电源电压范围内、低功耗和良好驱动能力之间的平衡,适合工业控制、传感器接口及常规模拟电路的双路放大需求。选择时根据带宽、偏移与输出电流要求做权衡,并注意电源去耦与热管理。

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