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HGSEMI TLC555N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI TLC555N
- Type
- HGSEMI
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- TLC555N
- Electronic Component
- 1
- Package
- DIP-8
- Electronic Component
- 555 Timer
- Electronic Component
- 0.077g
- Electronic Component
- 1
- Features
- Electronic Component
- Electronic Component
- BM0265070238
- Electronic Component
- 1
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 4.5V~15V
- Operating Current
- 30uA
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TLC555N 产品概述
一、简介
TLC555N（HGSEMI 华冠）为CMOS工艺的通用单定时器，集成一个定时器通道（单定时器）。相比传统双极性555，TLC555N具有极低的静态电流和电源电流尖峰，适合电池供电与低功耗场合。封装为DIP-8，便于面包板调试与穿孔板装配。
二、主要规格
- 定时器数：1
- 工作电压：4.5V ~ 15V
- 工作电流：典型 30μA（静态）
- 工作温度：-40℃ ~ +85℃
- 封装形式：DIP-8
三、功能特性
- CMOS工艺，低功耗、低电源噪声。
- 支持单稳（触发延时）与稳态（占空比可调振荡）两种工作模式。
- 单稳模式：延迟由单个外接电阻R和电容C精确控制，近似公式 t ≈ 1.1·R·C。
- 稳态模式（占空比可调）：振荡频率与占空比由两电阻R1、R2与一个电容C决定，近似频率 f ≈ 1.44/((R1+2R2)·C)，占空比 D ≈ (R1+R2)/(R1+2R2)。
- 输出驱动能力适中，适合驱动逻辑门、LED及小型继电器或作为后级驱动器的前级定时源。
四、典型应用
- 定时延时电路、单触发脉冲发生器。
- 占空比可调方波发生器、频率合成、脉宽调制（低速）。
- 电池供电设备、便携测量仪器、低功耗传感节点。
- 信号整形与抖动滤除前端电路。
五、使用要点
- 建议在近电源端并联0.01–0.1μF陶瓷电容以抑制瞬态噪声，尽管CMOS版本电流尖峰较小，去耦仍有助于稳定。
- 长导线连接外部定时电阻/电容会引入寄生电容与噪声，影响精度，必要时采用屏蔽或短连线。
- 在驱动感性负载时，加缓冲器或外接功率器件并注意反向抑制与散热。
六、包装与品牌信息
- 品牌：HGSEMI（华冠）
- 型号：TLC555N
- 封装：DIP-8，便于原型验证与通用电路替换。
TLC555N以其低功耗、高稳定性及通用性，适合各类需要精确时间控制且对功耗敏感的电子设计场景。
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