WMSIC Electronic Components

HGSEMI LM285M3-1.2/TR LM285M3

ModelLM285M3-1.2/TR
PackageSOT23-3
BrandHGSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HGSEMI LM285M3-1.2 / TR
Type
HGSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HGSEMI
Electronic Component
LM285M3-1.2/TR
Electronic Component
1
Package
SOT23-3
Electronic Component
Voltage Reference IC
Electronic Component
±0.3%
Electronic Component
0.037g
Electronic Component
1
Electronic Component
BM0264336358
Operating Temperature
40℃~+85℃
Electronic Component
80ppm/℃
Output Voltage
1.2V
Output Type
Electronic Component
Static Current(Iq)
8uA
(10Hz-10kHz)
60uVrms

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM285M3-1.2/TR 产品概述

一、主要特点

  • 输出类型:固定电压参考(1.200V)。
  • 高精度:初始精度 ±0.3%(典型高精度应用可直接使用)。
  • 低温漂:温度系数 80 ppm/℃,适合中高精度温度范围内的参考源应用。
  • 微功耗:静态电流 (Iq) 仅 8 μA,极适合电池供电与低功耗系统。
  • 最小工作/调节电流:最小阴极调节电流 8 μA,注意维持该电流以保证输出稳定性。
  • 低噪声:10 Hz–10 kHz 带宽内噪声仅 60 μVrms,适合要求低噪声的 ADC、采样系统。
  • 工作温度范围:-40 ℃ 至 +85 ℃。
  • 封装:SOT-23-3,适合表面贴装及空间受限设计。
  • 品牌:HGSEMI(华冠)。

二、产品性能指标(关键参数)

  • 输出电压:1.200 V(固定)。
  • 精度:±0.3%(出厂基准)。
  • 温度系数:80 ppm/℃。
  • 静态电流:8 μA(Iq)。
  • 最小调节电流:8 μA(保证在此电流以上维持电压精度)。
  • 噪声(10 Hz–10 kHz):60 μVrms。
  • 环境温度:-40 ℃ 至 +85 ℃。

三、典型应用场景

  • 低功耗数据采集系统(为 ADC 提供参考电压)。
  • 便携式医疗设备与传感器前端的精密参考。
  • 电池管理系统(BMS)与便携式仪表的精密基准源。
  • 电压比较、阈值检测、校准信号源。
  • 需要低噪声与低温漂的工业控制接口。

四、封装与订购信息

  • 封装形式:SOT-23-3,小型化、适合自动贴片生产。
  • 包装:带卷盘(TR:Tape & Reel),利于表面贴装生产线直接使用。
  • 型号示例:LM285M3-1.2/TR(标识为 1.2V 固定输出、SOT-23-3、卷带供货)。

五、设计与使用建议

  • 工作模式:LM285 系列为基准/分流类型参考,请根据应用选择串联限流或并联配置。若作为分流参考使用,需计算限流电阻 R = (Vin - Vref) / Iset,并确保 Iset ≥ 最小调节电流(8 μA)。
  • 旁路与去耦:建议在参考引脚与地之间并联 0.01 μF–1 μF 的低 ESR 陶瓷电容,以降低瞬态噪声和提高瞬态响应,电容应尽量靠近器件引脚布局。
  • 布局:参考器件为低噪声电路,地线应短而粗,避免将数字地噪声回流到参考地,必要时采用局部独立接地环或星形地。
  • 启动与动态性能:由于静态电流极小,启动响应可能受外部电路影响;在需要快速上电稳定的场合,可适当增大工作电流并增加旁路电容以改善动态响应。

六、热与可靠性注意事项

  • 功耗与封装温升:SOT-23-3 封装对功耗有限制,作为分流参考时需注意器件上的功耗 P = (Vin - Vref) × Itotal;在高输入电压或较大分流电流情况下,应计算并确保不会超过器件及 PCB 的散热能力。
  • 环境与长期稳定性:在苛刻环境或长期运行需要考虑电压漂移与封装应力对精度的影响,建议在最终产品中做长期漂移与温度循环测试。
  • 焊接工艺:遵循 SOT-23 焊接温度曲线,避免过热导致封装应力或性能退化。

总结:LM285M3-1.2/TR 是一款面向低功耗与高精度场景的 1.2V 固定电压参考,兼顾低噪声与小封装,适合便携与工业级精密参考应用。设计时重点关注最小调节电流、限流与散热管理以及良好的 PCB 布局与去耦措施,以发挥器件的最佳性能。

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