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HGSEMI 74HC595DM/TR 74HC595DM
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI 74HC595DM / TR
- Type
- HGSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- to
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- 74HC595DM/TR
- Electronic Component
- 1
- Package
- SOP-16
- Electronic Component
- positions Register
- Electronic Component
- 74HC
- Electronic Component
- 3.3g
- Electronic Component
- 1
- Features
- Output
- Electronic Component
- BM0227645449
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 2V~6V
- Output Type
- Electronic Component
- Clock Frequency(fc)
- 35MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
74HC595DM/TR 产品概述
一、产品简介
74HC595DM/TR（HGSEMI/华冠）是一款高速 CMOS 八位串行输入、并行输出的移位寄存器，带有内部寄存器与三态输出。本器件属于 74HC 系列，工作电压范围 2.0V 至 6.0V，工业级工作温度 -40℃ 至 +85℃，封装为 SOP-16（DM），可提供带卷带的 TR 盘装，适合自动贴装与批量生产。
二、主要功能与结构
- 8 bit 移位寄存与并行输出：将串行数据通过移位时钟（SRCLK）送入，利用寄存器时钟（RCLK）将数据并行置到输出寄存器。
- 三态输出：输出端口支持输出使能（OE）控制，低电平有效，可实现总线共享与多芯片级联。
- 串行输出（Q7'）支持级联扩展，便于多芯片串联以扩展位数。
- 异步复位（SRCLR）可清零移位寄存器（视器件具体引脚功能），便于初始化。
三、关键电气与时序参数
- 时钟频率（最大）：fc ≈ 35 MHz（器件在典型工作条件下可支持的移位时钟频率）。
- 传播延迟：tpd = 19 ns（在 VCC=4.5V、负载 50 pF 条件下测得），适合中高速驱动场合。
- 工作电压：2.0V ~ 6.0V，兼容 3.3V 与 5V 系统。
- 工作温度：-40℃ ~ +85℃，满足工业级应用需求。
四、典型应用场景
- LED 扩展驱动：单片 MCU 通过少数 IO 控制大量 LED 灯阵或数码管显示器。
- 外围接口扩展：为微控制器提供更多并行输出口，用于继电器、驱动器等控制。
- 数据级联处理：通过 Q7' 串出可实现多芯片级联，应用于流水灯、矩阵扫描等。
- 共享总线控制：利用 OE 的三态特性在总线上实现多主多从切换与总线隔离。
五、使用建议与注意事项
- 电源去耦：VCC 与 GND 之间建议并联 0.1 μF 陶瓷电容，靠近器件引脚放置，以减少开关干扰。
- 输出负载：尽量避免驱动过大电流，遵循器件数据手册的输出电流限制，并在需要时外接驱动器或缓冲器。
- 时序控制：移位时钟（SRCLK）与寄存器锁存（RCLK）的上升/下降沿关系应遵循时序要求，避免竞争与冒险。
- 三态控制：在多芯片总线共享时，确保 OE 在转换期间不会产生总线短路或冲突。
- 环境与焊接：SOP-16 封装适合常规 SMT 工艺，注意回流温度曲线以保护器件可靠性。
结语：74HC595DM/TR 结合了高速度、低电压兼容与三态输出特性，是扩展并行输出、实现串并转换与链式扩展的常用器件，适合工业与消费类电子广泛应用。更多详细极限参数与时序图请参考 HGSEMI 官方数据手册以确保设计符合规范。
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