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HGSEMI NE5532M/TR NE5532M
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HGSEMI NE5532M / TR
- Type
- HGSEMI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HGSEMI
- Electronic Component
- NE5532M/TR
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- Operational Amplifier
- Electronic Component
- 0.224g
- Electronic Component
- 1
- Electronic Component
- BM0227365047
- Operating Temperature
- 0℃~+70℃
- Amplifier
- 2
- (SR)
- 11V/us
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- (GBW)
- 10MHz
- Common Mode (CMRR)
- 100dB
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NE5532M/TR 产品概述
一、产品简介
NE5532M/TR 为华冠（HGSEMI）推出的双通道低噪声运算放大器，采用 SOP-8 封装，针对音频和精密放大场合设计。器件自 2023 年 SQ 批次起已更新为新版本，出货前建议客户做好样品验证以确认与既有系统的兼容性。
二、主要技术参数
- 放大器数：双路
- 共模抑制比（CMRR）：100 dB
- 噪声密度（eN）：8 nV/√Hz @ 1 kHz
- 输入失调电压（Vos）：5 mV（典型/最大视规格）
- 输入偏置电流（Ib）：500 nA
- 输入失调电流（Ios）：5 nA
- 增益带宽积（GBP）：10 MHz
- 压摆率（SR）：11 V/µs
- 最大供电电压（Vdd–Vss）：44 V（双电源工作范围：-22 V ~ +22 V）
- 工作温度：0 ℃ ~ +70 ℃
- 封装：SOP-8
- 品牌：HGSEMI（华冠）
三、性能特点
- 低噪声设计（8 nV/√Hz），适合高保真音频前置放大及信号处理。
- 较高的 CMRR（100 dB）在差分和共模信号环境中能有效抑制干扰。
- 11 V/µs 的压摆率和 10 MHz 的 GBP 能满足多数音频滤波器、缓冲器和小信号放大器的动态要求。
- 宽电源范围（最高 44 V）提高了系统设计灵活性，可支持较大供电幅度的应用。
四、典型应用
- 专业音频前置放大器、混音台输入级、耳机放大器。
- 有源模拟滤波器、仪表放大、精密信号处理。
- 需低噪声和高共模抑制的差分放大场景。
五、样品测试建议与注意事项
由于器件在 2023 年 SQ 批次后已更新版本，建议客户在量产前进行下列样品测试：
- DC 项目：输入失调电压、输入偏置/失调电流、静态供电电流、输出偏移及漂移。
- 交流/动态：增益带宽、开环增益、压摆率、频率响应与相位裕度（稳定性）、负载驱动能力。
- 噪声与共模抑制：1 kHz 噪声密度测量、CMRR 在常用频段的验证。
- 供电容错：在-22 V~+22 V 及单电源极限（Vdd–Vss≈44 V）下功能鲁棒性测试。
- 环境与可靠性：温度循环、工作温度范围内性能一致性、以及封装焊接热循环兼容性。
- 与既有电路的兼容性：确认输入/输出摆幅、偏置点与频响不会引入振荡或失真。
六、封装与订购
- 封装形式：SOP-8，便于表面贴装生产与替换旧款 8 引脚运放。
- 订购与批次注意：请在采购时注明批次需求并索取最新版样品进行确认，尤其对已投产设计务必与供应端确认版本差异。
以上为 NE5532M/TR 的产品概述及测试建议。如需详细的典型电路、引脚图或完整电气特性表（电压电流极限、温漂系数等），可提供具体资料以便进一步跟进。
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