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HXY MOSFET 1N5819WT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET 1N5819WT
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- 1N5819WT
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM0219881810
- Current
- 350mA
- Diode
- Electronic Component
- Current(Ir)
- 5uA@30V
- (Vf)
- 600mV@200mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N5819WT 产品概述
一、基本信息
1N5819WT是一款高性能的肖特基二极管，专为低电压和高效能应用而设计，具备出色的反向电压能力和低正向导通电压。该元器件的设计重点在于提升效率并减少功耗，适合用于各种电源管理和整流电路中。
二、主要特点
低正向导通电压：在200mA电流下，正向导通电压为约600mV。这使得1N5819WT在大电流传输时表现出较低的能量损失，从而提高了整体能效。
高反向耐压：该二极管的最大重复反向电压为40V，能够承受较高的峰值反向电压，确保在多种电源电路中稳定工作。
高脉冲电流能力：该元器件的最大脉冲电流可达350mA，适合用于高脉冲负载应用，确保其在动态条件下的可靠性。
小型封装：采用SOD-523封装，尺寸小巧，便于在空间受限的电路设计中应用。其良好的散热特性也使得其在高频、高温环境下仍能稳定工作。
高效能：肖特基二极管的快速恢复特性减少了开关损耗与逆向恢复电流，使得其在开关电源、整流器及快充应用中表现卓越。
三、应用场景
1N5819WT广泛适用于以下领域：
开关电源：1N5819WT能够有效地用作开关电源转换器中的整流二极管，以减少输出电压的损失并提高电源效率。
DC-DC转换器：在DC-DC转换系统中，此二极管能够提供高效的整流功能，尤其是在脉冲负载条件下，确保系统的稳定运行。
电池充电器：在各类电池充电器中，1N5819WT能够优化充电过程，确保快速且高效地充电。
信号整流：在信号处理场景中，1N5819WT能够用作信号的整流元件，将交流信号转换为直流信号，并减少信号的失真。
反向电压保护：此二极管还可以用于防止电路受到反向电压的损害，为敏感电子元器件提供保护。
四、技术规格
以下是1N5819WT的关键技术参数：
- 正向电压降：600mV@200mA
- 最大反向电压：40V
- 最大脉冲电流：350mA
- 工作温度范围：-55℃到+125℃
- 封装类型：SOD-523
- 材料：硅(Si)
五、总结
1N5819WT是一款性能优越、应用广泛的肖特基二极管，凭借其低正向电压、优秀的反向耐压和小型封装等特点，深受电源设计工程师的青睐。无论是在电源转换、信号整流还是电路保护中，1N5819WT都是一个可靠的选择，为各种电气设备提供高效、稳定的电源支持。在现代电子设备中，其高效能的特点使得1N5819WT成为降低功耗、提升系统效能的理想元器件。
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