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HXY MOSFET MB10F
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET MB10F
- Type
- HXY MOSFET
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- MB10F
- Electronic Component
- 1
- Package
- MBF
- Type
- Electronic Component
- Electronic Component
- Bridge Rectifier
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0258661878
- Current
- 1A
- Current(Ir)
- 5uA@1kV
- (Vf)
- 1.1V@500mA
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MB10F 产品概述
一、产品简介
MB10F 是华轩阳电子（HXY MOSFET）推出的一款单相整流桥（封装：MBF），面向中小功率高压整流场合设计。器件在典型工作点呈现低正向压降与极低反向漏电，适用于要求高耐压、低损耗与可靠整流的电源与保护电路。
二、主要电气参数
- 正向压降 (Vf)：1.1 V @ 500 mA
- 直流反向耐压 (Vr)：1000 V
- 平均整流电流：1 A
- 反向电流 (Ir)：5 μA @ 1000 V
- 非重复峰值浪涌电流 (Ifsm)：3 A
- 工作结温范围：-55 °C ~ +150 °C
- 类型：单相整流桥
- 封装：MBF
- 品牌：HXY MOSFET（华轩阳电子）
三、产品特性
- 高耐压：1000 V 额定反向耐压，适用于交流大电压或高压直流整流场合。
- 低正向压降：在 500 mA 时 Vf≈1.1 V，可降低整流损耗，提高能效。
- 极低反向泄漏：在满额定耐压下 Ir 仅 5 μA，有利于高阻抗或长时间待机电路保持低漏电能耗。
- 良好浪涌承受能力：非重复峰值浪涌电流 3 A，满足上电瞬态或充电电容冲击场景的短时冲击要求。
- 宽温度范围：-55~+150 °C，适用工业级恶劣环境。
四、典型应用场景
- 开关电源的高压整流（初级侧或高压直流回路）。
- 充电器与适配器的输入整流与续流结构。
- 小型逆变器、驱动电源、家电控制板的桥式整流。
- 高压测量、偏置电源以及需要低漏电的待机电路。
五、使用建议与注意事项
- 散热与封装：MBF 封装热阻相对较高，在接近 1 A 连续工作或高环境温度时应考虑良好铜箔散热和合适的板上铜面积。
- 浪涌与电容充放电：若电路含大型滤波电容，建议评估浪涌电流与限制充电冲击（如限流电阻或NTC），以免超过 Ifsm 限值。
- 漏电随温度上升：在高温环境下反向漏电会增大，敏感电路应留有余量或采用并联/选型方式降低影响。
- PCB 布局：整流桥输入与输出走线尽量短且粗，输入侧滤波电容靠近桥脚布局以减少电磁辐射与尖峰。
- 极性确认：装配前务必核对桥脚标识与电路极性，避免反接造成器件损坏。
六、品质与选型提示
- 在选型时关注典型工作点（Vf@If）与实际工作电流匹配，若长时间工作电流接近 1 A，应考虑额定余量或并联方案。
- 如需更高浪涌能力或更低正向压降，可在系统级从器件参数或散热设计两方面优化。
- 购买时注意供应商批次与品质保证，华轩阳电子提供的 MB10F 适合追求高耐压与低漏电的工业/消费电子应用。
如需针对特定电路（输入电压、滤波电容、工作温度等）做更详细的热设计或寿命/冲击评估，可告知具体参数，我可以给出更精确的选型与布局建议。
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