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HXY MOSFET SMBJ45CA
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET SMBJ45CA
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- SMBJ45CA
- Electronic Component
- 1
- Package
- SMB(DO-214AA)
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.193g
- Electronic Component
- 1
- Electronic Component
- BM0227249466
- Operating Temperature
- 65℃~+150℃
- Voltage
- 72.7V
- Current(Ir)
- 1uA
- Voltage(VBR)
- 50V；55.3V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMBJ45CA 产品概述
一、产品概况
SMBJ45CA 为华轩阳电子（HXY MOSFET）推出的一款双向瞬态抑制二极管（TVS），采用 SMB（DO-214AA）封装。器件专为保护电源线与数据线免受瞬态过压、雷击以及开关引起的浪涌脉冲而设计，适用于工业控制、电源模块、通信设备及消费电子等场景。
二、主要参数
- 极性：双向（可阻断正、负方向的瞬变电压）
- 反向截止电压 Vrwm：45 V
- 击穿电压 V(BR)：约 50 V ～ 55.3 V
- 钳位电压 Vc（典型）：72.7 V（在指定脉冲条件下测得）
- 峰值脉冲电流 Ipp：8.3 A
- 峰值脉冲功率 Ppp：600 W（基准脉冲条件）
- 反向漏电流 Ir：1 μA（典型）
- 工作温度范围：-65 ℃ ～ +150 ℃
三、特性与优势
器件功率等级高、钳位电压相对确定，能在高幅值短时脉冲下迅速进入导通状态，从而将过电压钳制到安全范围内。双向结构无需额外反向并联，便于保护交流或双向传输线路。低漏电流有助于在待机或精密测量条件下维持系统性能。
四、典型应用场景
- 开关电源与逆变器输入保护
- 串口、数据总线与通信接口防护（如RS‑485）
- 工业控制系统、仪器仪表的浪涌防护
- 车用电子的瞬态保护（需按系统规范确认）
五、封装与可靠性提示
SMB（DO‑214AA）封装兼顾散热与焊接可靠性。建议将TVS器件尽可能靠近被保护端口布局，走线短且低阻，以保证钳位效果和瞬态能量传导。焊接时参照厂家热特性，避免超温影响器件寿命；在高重复冲击场合，应考虑热耗散和能量累计对器件的应力。
六、选型与使用建议
选择时关注系统最大允许工作电压与钳位裕量，确保 Vrwm（45V）高于正常工作电压但低于被保护元器件允许的击穿水平。若脉冲能量或峰值电流高于标称值，应采用功率更高或并联多只器件，并注意并联时均流与热管理。最后，结合实际工作脉冲波形与频率，优先参考厂方完整数据手册进行验证。
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