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HXY MOSFET DMN6040SSD-HXY
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET DMN6040SSD-HXY
- Type
- SOP-8
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- DMN6040SSD-HXY
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.127g
- Electronic Component
- 1
- Electronic Component
- BM0257297292
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DMN6040SSD-HXY 产品概述
一、概述
DMN6040SSD-HXY 是华轩阳电子（HXY）推出的双通道独立 N 沟道功率 MOSFET，封装为 SOP-8，适用于中低电压功率开关与管理场合。每通道额定漏源电压 60V、连续漏极电流 6.5A，导通电阻 32mΩ（Vgs=10V），在体积与成本受限且需双路独立控制的电路中具有较好性价比。
二、主要电气参数
- 通道数量：2 个独立 N 沟道
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：6.5A（封装及散热条件限制）
- 导通电阻 RDS(on)：32mΩ @ Vgs=10V
- 阈值电压 Vgs(th)：约 1.4V
- 总耗散功率 Pd：2.1W（SOP-8 封装，需合理 PCB 散热）
- 栅极电荷 Qg：50nC @ Vgs=10V
- 输入电容 Ciss：1.92nF，输出电容 Coss：155pF，反向传输电容 Crss：116pF
- 工作温度：-55 ℃ ~ +150 ℃
三、特性与优势
- 双通道独立设计，便于在同一封装内实现两路功率开关或桥臂配置，节省 PCB 面积。
- 在 10V 栅压下低至 32mΩ 的导通电阻，有利于降低导通损耗（在 6.5A 时 I^2R 损耗约 1.35W）。
- 相对齐全的栅极/输入电容参数，便于估算开关损耗与选择驱动器。
- 宽温度范围与典型工业级规格，可靠性适合一般工业与消费类设备。
四、应用场景
- DC-DC 升降压转换器的下/高端开关（中低频）
- 电机控制与驱动（需注意峰值电流与散热）
- 电池管理与保护、电源切换、负载开关
- LED 驱动与一般功率开关场合
五、设计与使用建议
- 栅极驱动：建议采用近 10V 的驱动电压以达到标称 RDS(on)，若仅使用 4.5V 或 3.3V 驱动，导通电阻会显著上升，应验证导通损耗。
- 开关频率：Qg=50nC，Ciss≈1.92nF，适合中低频应用；若高频工作（数百kHz 以上），需评估驱动器能力及开关损耗，并增加栅极电阻以抑制振铃。
- 热管理：器件 Pd=2.1W 为理想散热条件下数值，SOP-8 封装对 PCB 散热依赖大，建议尽量使用热铜箔、散热过孔并考虑功率降额设计。
- 抗干扰与保护：为抑制开关尖峰，建议并联抑制电路（RC、TVS）并在栅极加阻尼电阻与钳位，避免 Crss 引起的 Miller 效应导致误触发。
- 布局注意：将电流回路短且粗，确保栅极接地回路干净，靠近驱动器布局以减少寄生。
六、选型与采购提示
- 若系统要求高频高效开关或更低导通电阻，可考虑 RDS(on) 更低或更适合低压栅驱的 MOSFET。
- 在批量采购或替换时，确认封装脚位、热阻与实际电流/温升测试结果，避免仅看额定值导致实际系统过热或失效。
DMN6040SSD-HXY 在双路独立、60V 档位的应用中提供了平衡的导通性能与成本，是中低频功率管理与开关场合的可靠选择。
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