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HXY MOSFET ESD5Z3.3-HXY
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET ESD5Z3.3-HXY
- Type
- SOD-523
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- ESD5Z3.3-HXY
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 60pF
- Electronic Component
- BM0259384617
- Operating Temperature
- 40℃~+125℃
- Voltage
- 8.4V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-2
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ESD5Z3.3-HXY 产品概述
一、产品简介
ESD5Z3.3-HXY 是华轩阳电子（HXY MOSFET）推出的一款单路单向静电放电（ESD）保护器件，采用 SOD-523 超小封装。针对 3.3V 电平接口进行了优化，能在突发静电或脉冲干扰下对敏感器件提供快速钳位保护，适用于移动终端、通信、消费类电子和工业控制等对空间和成本敏感的应用场景。
二、主要参数（典型值）
- 极性：单向
- 反向截止电压 Vrwm：3.3 V
- 钳位电压（Vc）：8.4 V
- 峰值脉冲电流 Ipp：11.2 A
- 峰值脉冲功率 Ppp：90 W（8/20 μs）
- 击穿电压（Vbr）：5 V
- 反向泄漏电流 Ir：1 μA
- 结电容 Cj：60 pF
- 通道数：单路
- 工作温度范围：-40 ℃ 至 +125 ℃
- 防护等级：符合 IEC 61000-4-2（ESD）与 IEC 61000-4-4（EFT）
- 封装：SOD-523
三、特性与优势
- 针对 3.3V 电平设计，反向截止电压精确，兼容常见逻辑与接口电压。
- 低钳位电压（8.4V），在大电流冲击下能有效限制电压尖峰，保护后级芯片。
- 高峰值脉冲能力（11.2A / 90W @8/20μs），能承受典型人体和系统脉冲能量。
- 结电容 60 pF，在多数数字信号线中对信号完整性的影响较小，适合高速接口保护。
- SOD-523 封装体积小，利于高密度 PCB 布局与自动贴装处理。
四、典型应用
- 3.3V 单片机 I/O、通信接口（UART、I2C、SPI）保护
- USB、耳机、音视频接口的防静电保护（要求低容抗场合）
- 移动设备与可穿戴设备的外部接口保护
- 工业控制与物联网模块的局部浪涌/静电防护
五、使用建议与布板要点
- 将器件尽量靠近受保护的接口引脚布置，缩短导线长度以降低等效串联电感。
- 为获得最佳性能，保护器负极应直接接地并联接到器件地平面，避免长回流路径。
- 在高频/高速信号上使用时需评估 Cj 对信号带宽的影响，必要时采用差分或其他屏蔽措施。
- 安装与回流焊符合 SOD-523 温度规范，避免超温影响器件性能与寿命。
如需样品、器件图纸（PCB 尺寸、封装引脚定义）或更多可靠性与测试数据，请联系华轩阳电子技术支持。
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