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HXY MOSFET DSK34
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET DSK34
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- DSK34
- Electronic Component
- 1
- Package
- SOD-123FL
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.04g
- Electronic Component
- 1
- Electronic Component
- BM0257677125
- Current
- 3A
- Diode
- Electronic Component
- (Vf)
- 550mV@3A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DSK34 产品概述
一、产品简介
DSK34 是华轩阳（HXY MOSFET）推出的一款独立式肖特基整流二极管，封装为 SOD-123FL。关键参数如下：
- 正向压降：典型 0.55 V @ 3 A
- 直流反向耐压：40 V
- 连续整流电流：3 A
- 工作结温度：-65 ℃ ~ +150 ℃
该器件以肖特基结构为基础，适合要求低正向压降、快速开关（无正向恢复）和较高电流密度的电源应用场景。
二、主要性能特点
- 低正向压降：在大电流时降低功耗与发热，提升效率。
- 快速开关响应：肖特基二极管无明显反向恢复，适合开关电源和高频整流。
- 宽温度范围：-65 ~ +150 ℃，适应工业级环境。
- 小体积封装（SOD-123FL）：便于表面贴装，适合密集布板与自动化生产。
三、典型应用场景
- 开关电源次级整流与同步整流替代
- DC-DC 降压/升压模块的续流与自由轮二极管
- 电池管理与电源路径 OR-ing（低压降并联或备用供电）
- 电机驱动的回电保护与浪涌吸收（配合抑制元件）
- LED 驱动与低压整流场合
四、电气与热设计建议
- 功耗估算：在额定电流连续工作时，最大功率近似 P = If × Vf = 3 A × 0.55 V ≈ 1.65 W，应据此进行热设计。
- 热管理：推荐在焊盘处使用较大铜面积与多颗过孔引出至内层或底层散热平面；必要时增加散热铜箔或金属底板。
- 温度裕度：在高环境温下需降额使用，确保结温低于最高允许值以延长寿命。
- 抗浪涌与瞬态：对感性负载或存在高压尖峰的场合，建议外加 TVS、RC 抑制或缓冲网络，防止击穿和热失效。
五、封装与焊接注意
- SOD-123FL 适合回流焊；请按照常规无铅回流曲线（如 J-STD-020）控制峰值温度与时间，避免过冲。
- 焊盘设计：推荐较宽的焊盘与短引线，保证良好焊接湿润和热传导；避免单点受力引起焊点裂纹。
- 机械保护：贴片后避免对封装直接施加剪切力或弯折，防止内部损伤。
六、可靠性与选型建议
- 若电路中可能出现高于 40 V 的反向尖峰，应选用更高耐压器件或配合抑制器件使用。
- 在高环境温度与长时间高应力工作时，应考虑适度降额（电流或功耗）以提高可靠性。
- 对于要求更低正向压降或更大电流的场合，可在评估热管理条件后并联或选择更高规格器件。
结语：DSK34 以其低压降、快速响应和小型封装，在中低电压、中等电流的整流与保护场合具有良好性价比。设计时重点关注热散与瞬态保护，能充分发挥其性能并保证长期可靠性。
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