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HXY MOSFET S3M
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET S3M
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- S3M
- Electronic Component
- 1
- Package
- SMB
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.191g
- Electronic Component
- 1
- Electronic Component
- BM0257710912
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 5uA
- (Vf)
- 1.1V@3A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S3M 整流二极管（SMB 封装）产品概述
一、产品简介
S3M 是一款高电压、3A 额定整流二极管，华轩阳电子（HXY MOSFET）出品，采用 SMB（DO-214AA）封装。该器件以 1kV 的反向耐压和 3A 的整流电流定位，适合中高压整流与保护应用。典型正向压降为 1.1V（IF=3A），在高压场合兼顾稳健的反向漏电特性与抗浪涌能力。
二、主要电气参数与特性
- 正向压降 Vf：1.1V @ IF = 3A（典型测试点，实际值请参照厂方数据表）
- 最大直流反向耐压 Vr：1000V，适用于高压整流与阻断场合
- 额定整流电流：3A（平均值，持续工作需考虑散热与环境温度）
- 反向漏电流 Ir：5μA（通常在室温、额定 Vr 下测得）
- 非重复峰值浪涌电流 Ifsm：100A（单次突发浪涌能力，注意热应力限制）
- 工作结温范围：-65℃ ~ +150℃，适应宽温度工作环境
三、封装与热管理
SMB（DO-214AA）封装体积小、焊接方便，适合自动贴片与回流工艺。尽管器件额定电流为 3A，但受限于封装散热能力，实际持续电流需根据 PCB 散热设计、铜箔面积以及环境温度进行降额。建议在高平均电流或连续工作场景下增大散热铜箔、或采用散热垫/散热器以降低结温，延长寿命。
四、典型应用场景
- 高压整流电路（整流桥、单管整流）
- 交换电源次级整流与输入整流
- 电源因数校正（PFC）中的高压整流单元（视反向恢复特性而定）
- 工业电源、高压电池充电器、逆变器及保护电路
- 各类需要高 Vr 与中等电流能力的场合
五、选型与使用注意事项
- 测试条件：请以厂方完整数据表为准，关注 Vf、Ir 测试时的温度与电流条件。
- 冲击与浪涌：Ifsm 为非重复峰值浪涌能力，频繁或重复浪涌需选择具更高能量吸收或并联保护方案。
- 反向恢复：若用于高速开关电源，需关注反向恢复时间与峰值反向电流，必要时选择快恢复或肖特基方案以降低开关损耗与 EMI。
- 温度管理：在高环境温或高平均电流下应按热阻导则降额使用，避免结温超过 150℃。
- 安装与焊接：遵循 JEDEC/IPC 推荐的回流焊温度曲线，避免过长高温暴露导致封装或内部应力损伤。
六、储存与可靠性
建议按湿度敏感等级（MSL）及厂方说明储存，长期储存前避免受潮与强光照射。器件在额定工作条件下经过常规热循环、浪涌和老化试验，其可靠性适合工业级应用；具体可靠性数据与试验报告建议向供应商索取。
七、采购与技术支持
华轩阳电子（HXY MOSFET）品牌供应的 S3M 屬于通用高压整流器件，具有成本效益与广泛适用性。采购时请确认完整型号与批次，获取最新器件数据手册以核实所有参数，并在设计阶段与厂商技术支持沟通关键应用（如高频整流、重复浪涌或极端环境），以保证选型与设计的可靠性。
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