WMSIC Electronic Components

HXY MOSFET ESDA6V8AV6

ModelESDA6V8AV6
PackageSOT-563
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET ESDA6V8AV6
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
ESDA6V8AV6
Electronic Component
1
Package
SOT-563
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.03g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
9pF
Electronic Component
BM0227368448
Operating Temperature
55℃~+125℃
Voltage
14.4V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESDA6V8AV6 产品概述

一、产品简介

ESDA6V8AV6 是华轩阳电子(HXY MOSFET)推出的一款五路单向瞬态抑制器(ESD保护二极管),专为保护多信号接口和敏感器件免受静电放电和快速瞬变脉冲干扰而设计。器件集成度高、体积小(SOT-563 封装),适用于对板面空间要求严格的消费电子、通信和工业控制等应用。

二、主要性能参数

  • 极性:单向(针对单端信号提供保护)
  • 反向持续工作电压 Vrwm:5 V(适合 5V 系统和大多数数字接口)
  • 击穿/箝位相关:击穿电压(Vz)约 6.8 V;典型钳位电压为 14.4 V(在规定脉冲条件下)
  • 峰值脉冲电流 Ipp:1.6 A;峰值脉冲功率 Ppp:20 W(短时脉冲能量承受能力)
  • 反向漏电流 Ir:500 nA(在 Vrwm 条件下,低漏电适配高阻抗电路)
  • 结电容 Cj:9 pF(对高速信号影响有限,但仍需在高速接口选型时评估)
  • 通道数:五路(一次可保护多条信号线)
  • 工作温度:-55℃ 至 +125℃(工业级温度范围)
  • 防护标准:达到 IEC 61000-4-2(ESD)与 IEC 61000-4-4(EFT)规范要求
  • 封装:SOT-563(小型化封装,便于高密度布局)

三、典型应用场景

  • USB、UART、I2C、SPI 等多路数字接口的板级 ESD 保护
  • 移动设备、可穿戴设备、路由器和机顶盒等空间受限产品的前端防护
  • 工业控制和传感器接口,防止因静电或电磁干扰导致的器件失效
  • 多路复用输入端、键盘矩阵或音视频信号线的浪涌缓冲

四、封装与环境耐受性

SOT-563 小封装便于在有限 PCB 面积上部署五路保护,但同时意味着热耗散能力受限。器件在-55℃~+125℃工作温度范围内保持可靠性,适合工业级应用。满足 IEC 61000-4-2 与 IEC 61000-4-4,能有效应对常见的接触/空气放电与快速瞬变脉冲干扰。

五、PCB 布局与使用建议

  • 将器件靠近被保护的输入端放置,尽量缩短受保护信号到器件的走线长度,以降低感抗和串联电感导致的钳位电压升高。
  • 将器件地端尽可能直接回流到 PCB 地平面,避免通过长走线回流,保证 ESD 能量的快速、安全泄放。
  • 对高速差分信号或对电容敏感的接口,在选型时综合考虑 9 pF 的结电容对信号完整性的影响;必要时配合阻抗匹配、电阻或 EMI 网络进行优化。
  • 注意器件的峰值功率与脉冲电流限制(Ppp=20 W, Ipp=1.6 A),若预期遭受更高能量的浪涌,应在保护链路中增加限流元件或选择更高能级的防护器件。

六、选型与注意事项

ESDA6V8AV6 适合保护 5V 及以下电平的多路单端信号线,若系统电压高于 5V,应考虑更高 Vrwm 的器件。小封装带来空间优势的同时,热耗散和重复高能脉冲承受能力有限,不建议在频繁强干扰环境下单独使用。下单或设计时,请参考华轩阳电子最新数据手册获取详细的脉冲测试条件、钳位曲线和封装尺寸,确保与系统需求匹配。

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