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HXY MOSFET HXY6206I-3.3
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET HXY6206I-3.3
- Type
- HXY MOSFET
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- 240mV@(50mA)
- Electronic Component
- HXY MOSFET
- Electronic Component
- HXY6206I-3.3
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Linear Regulator(LDO)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0258661750
- Operating Temperature
- 40℃~+85℃@(Ta)
- Operating Voltage
- 8V
- Output
- Electronic Component
- Output Voltage
- 3.3V
- Output Current
- 300mA
- Output Type
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HXY6206I-3.3 产品概述
一、产品简介
HXY6206I-3.3 是华轩阳电子（HXY MOSFET）推出的一款固定输出线性稳压器（LDO），单路正输出，输出电压3.3V，面向低功耗与便携类电子系统。器件采用SOT-23小封装，工作电压支持至8V，最大输出电流可达300mA，适合空间受限的电源域稳压需求。
二、主要电气参数
- 输出电压：3.3V（固定）
- 最大输入电压：8V
- 最大输出电流：300mA
- 压差（Dropout）：240mV（测量条件：50mA）
- 静态电流（Iq）：3µA，适合电池供电的低静态损耗场合
- 电源纹波抑制比（PSRR）：40dB @ 1kHz
- 工作温度范围：-40℃ ~ +85℃（Ta）
三、保护与特性
器件内置过流保护（OCP）和短路保护，有利于在负载突变或故障时保护器件与系统负载。此外，低静态电流与较高的PSRR使其在噪声敏感与省电场景表现良好。
四、封装与热设计
采用SOT-23封装，适合SMT装配与小尺寸PCB。需注意功耗计算：Pd ≈ (Vin − 3.3V) × Iout。若Vin接近8V且负载接近300mA，耗散功率约为1.4W，SOT-23封装对持续高功耗有限制，建议通过增大铜箔面积、下层散热铜和合理布局降低结壳温升，避免热关断频繁触发。
五、典型应用场景
- 便携式设备与电池供电模块
- 物联网终端、传感器供电
- 工业控制与嵌入式系统的3.3V基准电源
- 对噪声和待机功耗有要求的低速外设供电
六、设计与选型建议
- 输入侧建议并联0.1µF陶瓷旁路电容，输出侧建议使用1µF~10µF X7R陶瓷电容（详见器件实际数据手册对ESR的具体要求）。
- 布局要保证输入电容靠近VIN脚、输出电容靠近VOUT脚并做完整地参考接地，减小环路面积以提高PSRR和瞬态响应。
- 在高电流或高差压场合，评估散热条件或考虑使用散热更好的封装/外置降压预稳压方案。
更多详细电气特性、引脚定义与典型应用电路，请参考HXY6206I-3.3完整数据手册以便在实际设计中准确匹配参数与可靠性要求。
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