WMSIC Electronic Components

HXY MOSFET BC847A

ModelBC847A
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET BC847A
Type
HXY MOSFET
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
BC847A
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0228150190
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
100mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC847A 产品概述

一、产品简介

BC847A 是一款小信号 NPN 双极型晶体管,华轩阳电子(HXY MOSFET)以 SOT-23 封装提供该型号,适用于低电流开关和小信号放大场合。器件具有较高的直流电流增益和良好的高频特性,适合便携式电子、消费类产品与信号链路中的常规放大与驱动任务。

二、主要电气参数

  • 晶体管类型:NPN
  • 集电极电流 (Ic):最大 100 mA
  • 集-射极击穿电压 (Vceo):45 V
  • 最大耗散功率 (Pd):约 200 mW(SOT-23 封装,受温度影响需注意降额)
  • 直流电流增益 (hFE):约 110(在 Ic=2 mA、VCE=5 V 条件下)
  • 特征频率 (fT):约 100 MHz,适合小信号放大到较高频率范围
  • 集电极截止电流 (Icbo):典型 15 nA(表征漏电流小,适合高阻抗电路)
  • 集电极饱和电压 (VCE(sat)):典型 600 mV(在规定的 IB/Ic 条件下)
  • 发射-基极击穿电压 (Vebo):约 6 V

以上参数以生产商数据为准,具体应用时建议参照 HXY 提供的完整数据手册。

三、应用场景

  • 小信号放大:前置放大、低频音频放大及中频增益级,借助 100 MHz 的 fT 可在中高频段工作。
  • 开关驱动:作为逻辑电平控制的小型开关,用于驱动指示灯、继电器隔离驱动(在允许电流范围内)。
  • 电平移位与缓冲:高增益与低漏电流适合用作信号缓冲与电平转换。
  • 通用电子电路与便携设备:SOT-23 小型化封装便于 PCB 高密度布局。

四、封装与管脚

封装:SOT-23(小型三脚封装),典型管脚排列(制造商略有差异,请以数据手册为准):

  • 引脚 1:集电极 (C)
  • 引脚 2:基极 (B)
  • 引脚 3:发射极 (E)

SOT-23 封装热阻较大,工作时应考虑 PCB 铜箔散热及环境温度对 Pd 的影响。

五、使用建议与注意事项

  • 功耗管理:在 SOT-23 封装下 Pd 约为 200 mW,实际允许功耗随环境温度线性降额,长期工作请保证结温和环境温度在安全范围内。
  • 饱和驱动:若作为开关使用,确保基极有足够驱动电流以降低 VCE(sat),但避免基极电流过大导致器件超出最大功耗。
  • 静电保护:建议在装配及运输过程中采取 ESD 防护措施,避免损坏基极-发射极结。
  • 封装一致性:不同制造批次或厂商的管脚和特性可能有细微差异,量产设计前应做样品验证。

六、比较与替代

BC847A 在 45 V 级、100 mA 的小信号晶体管中属于常用型号。若需要更高功耗或更低 VCE(sat),可考虑更大封装或专用低饱和晶体管;若电流需求更小或需更低噪声,可选用专用低噪声型号。选型时应综合考虑 Vceo、Ic、hFE、fT 与封装热性能。

七、采购与可靠性

华轩阳电子(HXY MOSFET)提供 BC847A 的 SOT-23 产品,常见为无铅环保封装。采购时请确认批次、原厂或授权分销商渠道并获取完整规格书与检验报告,以保证长期可靠性与一致性。

总结:BC847A 在小尺寸封装下提供了平衡的电流能力、增益与频率响应,适合多种通用小信号应用。设计时重视功耗与散热、参照厂商资料以确保电路稳定运行。

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