WMSIC Electronic Components

HXY MOSFET LM321

ModelLM321
PackageSOT-23-5L
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET LM321
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
LM321
Electronic Component
1
Package
SOT-23-5L
Electronic Component
Operational Amplifier
Electronic Component
0.039g
Electronic Component
1
Electronic Component
BM0258662241
Operating Temperature
40℃~+85℃
Amplifier
1
Output Current
40mA
(SR)
400V/ms
Power Supply Voltage
3V~30V
Static Current(Iq)
430uA
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM321 单路运算放大器(HXY MOSFET 华轩阳电子)产品概述

LM321 为单路通用运算放大器,采用 SOT-23-5L 小封装,面向便携式、电源受限和空间受限的模拟前端应用。该器件在单电源和宽电源电压范围内工作,具备较好的增益带宽与快速的瞬态响应,适合信号调理、缓冲、滤波与驱动小负载等场景。

一、主要规格一览

  • 放大器数:单路
  • 最大电源差(VDD–VSS):32 V
  • 单电源工作范围:3 V ~ 30 V
  • 增益带宽积(GBP):1 MHz
  • 输入失调电压(Vos):典型 7.9 mV
  • 压摆率(SR):400 V/ms
  • 输入偏置电流(Ib):约 500 nA
  • 输入失调电流(Ios):约 5 nA
  • 噪声密度(en):40 nV/√Hz @1 kHz
  • 共模抑制比(CMRR):85 dB
  • 静态电流(Iq):430 μA
  • 输出电流能力:最大 40 mA
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 封装:SOT-23-5L
  • 品牌:HXY MOSFET(华轩阳电子)

二、性能特点与优势

  • 宽电源电压:支持 3 V 至 30 V 单电源供电,且最大电源差可达 32 V,方便与多种系统电源匹配。
  • 低静态功耗:静态电流约 430 μA,适合功耗敏感的便携设备。
  • 适中带宽与快速响应:1 MHz 的增益带宽与 400 V/ms 的高压摆率,可在较宽频带内保证较快的输出跟踪性能,适合滤波器和缓冲放大。
  • 低噪声表现:1 kHz 处 40 nV/√Hz 的噪声密度,有利于低噪放大器应用与传感器前端。
  • 中等偏置与失调:输入偏置电流与失调电压处于典型通用放大器级别,单端高阻抗源时需注意偏置带来的误差。

三、典型应用场景

  • 传感器信号调理(温度、压力、加速度等低频传感器)
  • 缓冲器与电压跟随器,用于阻抗变换与稳定驱动下一级电路
  • 主动滤波与音频前置放大(低至中等带宽需求)
  • 电平移位、比较器预放大与小功率驱动负载(<40 mA)
  • 电池供电与便携设备中对体积与功耗敏感的模拟电路

四、封装与布局建议

  • SOT-23-5L 小封装适合 PCB 面积受限设计。布局时建议将电源去耦电容(例如 0.1 μF 陶瓷并联 1 μF~10 μF)尽可能靠近 VCC 与 GND 引脚放置,减少环路电感。
  • 输入引脚尽量缩短走线,弱信号线使用地线屏蔽或单点接地,以降低噪声拾取和偏置引入误差。
  • 输出驱动接近 40 mA 时注意 PCB 散热与温升,避免长期在极限工况下工作。

五、设计注意事项

  • 噪声与失调:对于高精度测量,应在电路级加上失调校准或差分测量,必要时用滤波减少高频干扰。
  • 共模范围与输出摆幅:该器件并未明确标称轨到轨输入/输出,设计时应验证输入共模范围及输出在所用电源与负载下的实际摆幅。
  • 旁路与稳定性:在高增益或驱动容性负载时注意相位裕度,必要时并联小电阻或采用补偿网络保障稳定。

总结:LM321(HXY MOSFET 华轩阳电子,SOT-23-5L)为一款面向通用信号调理与便携应用的单路运算放大器,结合宽电源范围、适中带宽、较低噪声和小封装特点,在体积受限且对性能有一定要求的模拟前端设计中具有良好性价比。设计时注意电源去耦、输入布局与失调管理以获得最佳表现。

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