WMSIC Electronic Components

HXY MOSFET DW03

ModelDW03
PackageSOT-23-5L
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET DW03
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
DW03
Electronic Component
1
Package
SOT-23-5L
Electronic Component
Battery Management
Electronic Component
0.027g
Electronic Component
1
Features
Current
Electronic Component
BM0258662212
Operating Temperature
40℃~+85℃
Operating Voltage
2V~6V
Battery Type
Battery
Battery
1
ICType
IC
0VBattery
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DW03 产品概述

一、产品简介

DW03 是面向单节锂离子/聚合物电池的电池保护芯片,封装为 SOT-23-5L,由 HXY MOSFET(华轩阳电子)提供。芯片工作电压范围 2V~6V,适用于单节电池管理,支持 0V 电池唤醒充电,静态电流仅 1µA,工作温度范围 -40℃~+85℃。设计用于在体积受限的便携设备中实现安全的过充、过放、过流/短路保护及自动恢复功能。

二、主要特性

  • 适用电池:单节锂离子/聚合物(1S)
  • 工作电压:2V ~ 6V
  • 充电饱和电压(典型设计目标):4.3V
  • 放电截止电压:2.4V
  • 0V 电池充电:支持(低电压唤醒充电)
  • 静态电流(Iq):1µA(低功耗待机)
  • 工作温度:-40℃ ~ +85℃
  • 封装:SOT-23-5L,便于小尺寸 PCB 布局
  • 品牌:HXY MOSFET(华轩阳电子)

三、典型功能说明

  • 过充保护:当电池电压超过设定上限(接近 4.3V)时,芯片切断充电路径,防止过充造成安全隐患;电压恢复到安全范围后,可自动复位或通过外部条件复位。
  • 过放保护:当电池电压下降到放电截止电压(2.4V)时,切断放电路径,避免深度放电损伤电芯;在充电唤醒条件下可自动恢复。
  • 过流/短路保护:检测异常放电电流并触发保护,短路事件后迅速切断输出,减少热失控风险。
  • 0V 唤醒充电:对于完全耗尽至 0V 的电池,芯片支持低电流预充唤醒功能,使电池电压恢复到正常充电门槛后进入标准充电保护模式。
  • 低功耗设计:1µA 的静态电流适合对待机耗电敏感的便携与物联网终端。

四、典型应用场景

  • 便携式电子产品:蓝牙耳机、可穿戴设备、MP3/MP4 等小型消费电子
  • 智能家居与物联网终端:传感器节点、定位标签、遥控器
  • 小型移动电源、备用电池组
  • 其它单节电池供电的便携系统

五、设计与使用建议

  • 外部 MOSFET 选择:虽然 DW03 内置保护逻辑,但通常与外部功率 MOSFET 配合使用以承载放电/充电电流,选型应关注 Rds(on)、封装散热能力和导通损耗。
  • 感测与阻流电阻:根据系统最大放电电流,合理选择电流检测电阻以确保过流检测与功率损耗平衡。
  • PCB 布局:电流路径(电池负极、MOSFET 和感测电阻)应尽量短且宽,靠近芯片放置旁路电容以稳定检测性能。
  • 热管理:为高电流场合预留散热空间,避免 MOSFET 与阻流元件过热触发误动作。
  • 测试与验证:在开发阶段进行充放电循环、短路与低温高温试验,验证芯片在极端条件下的响应与可靠性。
  • 电压门限与容差:在系统设计中保留一定余量,考虑电池内阻、温度对电压门限的影响,确保误触发率低且充放电性能可靠。

六、封装与订购信息

  • 封装形式:SOT-23-5L,适合自动贴片加工
  • 推荐型号标识:DW03(HXY MOSFET / 华轩阳电子)
  • 适配配件:配合合适规格的功率 MOSFET 与低阻抗电流检测电阻,可形成完整的单节电池保护模块

七、总结

DW03 为单节锂电池提供了一套紧凑、低功耗且功能齐全的保护解决方案,尤其适合对尺寸和待机能耗有严格要求的便携与物联网终端。合理选择外部 MOSFET 与电流感测元件,配合良好的 PCB 布局与热设计,可在实际产品中实现可靠且高效的电池保护。若需获取详细电气参数与典型应用电路,请参考厂商的详细数据手册或联系华轩阳电子技术支持。

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