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HXY MOSFET PBSS5160T-HXY
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET PBSS5160T-HXY
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- PBSS5160T-HXY
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.022g
- Electronic Component
- 1
- Electronic Component
- BM0264404646
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 150MHz
- Power Dissipation(Pd)
- 250mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PBSS5160T-HXY 产品概述
一、产品简介
PBSS5160T-HXY 是华轩阳电子（HXY MOSFET）推出的一款小封装PNP硅双极结三极管，采用SOT-23封装，面向高频小信号放大与开关应用。该器件在保持高增益与快速响应的同时，兼顾耐压能力与低漏电特性，适合便携与空间受限的电子系统。
二、主要参数
- 晶体管类型：PNP（单只）
- 最大集电极电流 Ic：1A（脉冲或受限条件下）
- 集-射击穿电压 VCEO：60V
- 耗散功率 Pd：250mW（Ta=25℃，无额外散热）
- 直流电流增益 hFE：典型范围 100～300（工作点相关）
- 特征频率 fT：150MHz
- 集电极截止电流 Icbo：100nA（典型）
- 集电极饱和电压 VCE(sat)：约600mV（在指定Ib条件下）
- 射基极击穿电压 VEBO：5V
- 工作温度范围：-55℃ ～ +150℃
- 封装：SOT-23
三、关键特性
- 高增益：hFE 高达 300，便于在小基极电流下实现较大放大倍数。
- 高频性能良好：150MHz 的过渡频率适合VHF及高速开关场合。
- 低漏电：Icbo 典型值仅100nA，适合低功耗电路设计。
- 中等耐压：60V VCEO 可满足多数中低压电源环境要求。
四、典型应用
- 小信号放大器、射频前端缓冲。
- 高速开关与驱动级。
- 低电流电平位移与互补推挽电路（与NPN配合）。
- 便携设备、传感器接口及模拟前端。
五、封装与引脚（典型）
- 封装：SOT-23，三引脚。
- 典型引脚排列（封装朝上，平面朝观察者时）：1—发射 E，2—基极 B，3—集电 C（不同厂商封装请以最终数据手册为准）。
六、热管理与使用注意
- 虽然器件标称Ic可达1A，但在SOT-23小封装和Pd=250mW的限制下，连续1A工作通常受限于耗散能力与VCE导致的功耗。设计时应保证实际功耗 P = VCE × IC ≤ 限定Pd，并考虑PCB铜箔散热、脉冲工作和占空比。
- 避免反向基射电压超过 VEBO（5V），以防损坏基极结。
- 在饱和开关应用中需提供足够基极驱动电流，注意hFE在饱和区会显著下降，可能需要较大的Ib以保证低VCE(sat)。
- 推荐在高温条件下进行热退化评估并留有安全裕度。
七、典型电路建议
- 作为共射放大器使用时，注意偏置稳定性与退化电阻，以利用其高hFE实现高增益而不致失稳。
- 用于开关时建议采用限流基极电阻和适当的驱动级，配合PCB散热优化以降低结温。
八、订购与存储
- 型号：PBSS5160T-HXY，品牌：华轩阳电子（HXY MOSFET）。
- 建议库存保存在干燥、常温环境，避免潮湿与静电。购买与生产应用前请参考华轩阳最终版数据手册以确认引脚、最大额定值与推荐使用条件。
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