WMSIC Electronic Components

HXY MOSFET MMBT5551

ModelMMBT5551
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET MMBT5551
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
MMBT5551
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.043g
Electronic Component
1
Electronic Component
BM0227691800
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
600mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5551 产品概述

一、概述

MMBT5551 是一款高压、小功耗的 NPN 硅小信号三极管,适用于高压开关、放大和保护电路。该器件由华轩阳电子(HXY MOSFET)生产,采用 SOT-23 封装,具有良好的高压耐受能力与宽频响应,适合空间受限且需承受较高集电极电压的应用场合。

二、主要参数

  • 晶体管类型:NPN
  • 集电极电流 Ic:600 mA(峰值或短时条件下)
  • 集-射极击穿电压 Vceo:160 V
  • 耗散功率 Pd:300 mW(SOT-23,Ta=25°C)
  • 直流电流增益 hFE:300 @ Ic=10 mA, Vce=5 V
  • 特征频率 fT:300 MHz
  • 集电极截止电流 Icbo:50 nA
  • 集电极饱和电压 VCE(sat):200 mV @ Ic=50 mA, Ib=5 mA
  • 发-基击穿电压 Vebo:6 V

(以上参数基于典型测试条件,实际应用应参考完整数据手册并考虑温度与封装热阻影响。)

三、主要特性

  • 高电压承受力:160 V 的 Vceo 使其适合高压信号链及保护电路。
  • 低饱和压降:VCE(sat) 约 200 mV(在指定偏置下),利于低功耗开关。
  • 高频性能良好:fT≈300 MHz,可用于高速信号放大与驱动。
  • 低漏电流:Icbo≈50 nA,在高阻抗输入与精密应用中表现稳定。
  • 小型封装:SOT-23 节省 PCB 面积,适合便携与密集布局。

四、典型应用

  • 高压开关与驱动电路(如继电器驱动、MOSFET 驱动前级)
  • 高频小信号放大器与前置放大电路
  • 电源保护、过压/过流检测电路
  • 信号电平转换与接口驱动(需考虑发-基极反向耐压)
  • 消费电子、工业控制、通信终端等场景

五、封装与引脚

  • 封装形式:SOT-23,三引脚小外形,适于手工焊接与自动贴装生产。
  • 引脚定义(典型,出厂请参照实物标识与数据手册):
    • 引脚 1:基极(B)
    • 引脚 2:集电极(C)
    • 引脚 3:射极(E)
  • 注意:SOT-23 的热阻较大,长时间高功耗工作需在 PCB 上做好散热设计或降额使用。

六、使用建议与注意事项

  • 避免发-基极反向击穿(Vebo=6 V),在电路设计中加入限流或钳位措施。
  • 集电极电流 600 mA 为短时承受能力,长期工作应注意 Pd 与封装的热极限,必要时并联或选择散热更好的封装。
  • 在高频应用中注意引线电感与布局,缩短信号回流路径以保持 fT 性能。
  • 推荐在实际应用中参考完整器件数据手册并进行可靠性与温升评估。

七、质量与供应

华轩阳电子(HXY MOSFET)按行业标准生产,推荐在正规渠道采购并索取原厂规格书与检验报告,以确保产品的规格一致性与可靠性。若需替代或配对,请提供具体电路条件以便选型建议。

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