WMSIC Electronic Components

HXY MOSFET BV05C

ModelBV05C
PackageSOD-323
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET BV05C
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
BV05C
Electronic Component
1
Package
SOD-323
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.03g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.6pF
Electronic Component
BM0257710628
Operating Temperature
40℃~+125℃
Voltage
16V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BV05C 产品概述

一、产品简介

BV05C 是华轩阳电子(HXY MOSFET)推出的一款单路双向瞬态抑制(二极管类)保护器件,封装为 SOD-323,专为低电压、高速数据线路的小体积防护设计。器件在静态条件下反向耐受电压(Vrwm)为 5V,击穿电压约 6.1V,具有低漏电(Ir≈100 nA)和极低结电容(Cj≈0.6 pF),在浪涌脉冲保护能力上可承受 10A(8/20 μs)峰值脉冲电流,峰值脉冲功率 Ppp 为 300W(8/20 μs),钳位电压约 16V。

二、主要特性

  • 极性:双向(适用于无固定极性或双向过压场景)
  • 反向耐受电压 Vrwm:5V;击穿电压(Vbr):6.1V
  • 钳位电压:约 16V(Ipp=10A@8/20 μs)
  • 峰值脉冲电流:10A(8/20 μs);峰值脉冲功率:300W(8/20 μs)
  • 反向电流 Ir:约 100 nA(低漏电)
  • 结电容 Cj:0.6 pF(适合高速信号线)
  • 工作温度范围:-40℃ ~ +125℃
  • 符合防护等级:IEC 61000-4-5(浪涌)与 IEC 61000-4-2(静电放电)
  • 封装:SOD-323,单路

三、典型应用场景

  • USB、UART、I2C、SDA/SCL 等低压高速数据线防护
  • 手机、平板、可穿戴设备、IoT 终端的接口保护
  • SIM 卡、摄像头总线、音频与信号线的静电与浪涌防护
  • 工业控制的小电压信号保护场合

四、设计与布局建议

  • 器件应尽量靠近被保护端口放置,输入线与接地的走线要尽量短并增大铜箔面积以利于散热与快速放电。
  • 对于较高能量的浪涌(接近器件 Ppp 限制),建议在系统中配合限流元件(熔丝、贴片电阻)或电感,以分担能量并保护器件寿命。
  • 结电容仅 0.6 pF,适合高速信号线,但在差分对布线时仍需注意阻抗匹配与对称布局,避免影响信号完整性。
  • SOD-323 为表面贴装小型封装,适合空间受限设计,但散热能力有限,应关注周边铜箔热扩散。

五、可靠性与选型提示

  • BV05C 针对 ESD(IEC 61000-4-2)和浪涌(IEC 61000-4-5)场景优化,能在常见静电放电与短时浪涌事件中吸收能量并钳位保护下游器件。
  • 在选型时,请确认系统最大工作电压不超过 Vrwm(5V),并考虑钳位电压(16V)对应下游器件的耐压能力。
  • 若系统可能遭遇更高能量或更频繁冲击,建议选择能量等级更高或并联/串联保护方案以延长可靠性。

如需本器件的封装尺寸图、典型电气特性曲线或在特定应用中(例如 USB3.x、差分高速总线)的更详细布局建议,可提供更多设计背景以便给出针对性方案。

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