WMSIC Electronic Components

HXY MOSFET EL357C

ModelEL357C
PackageSOP-4
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET EL357C
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
EL357C
Electronic Component
1
Package
SOP-4
Electronic Component
Transistor Output Optocoupler
Electronic Component
0.276g
Electronic Component
1
Electronic Component
3us
Electronic Component
BM0257677135
Operating Temperature
55℃~+110℃
Load Voltage
80V
Type
DC
Output Current
50mA
Output Type
Photoelectric Transistor
Output Channel Count
1

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EL357C 产品概述

一、产品简介

EL357C 是一款晶体管输出型光电耦合器,采用 SOP-4 封装,由 HXY MOSFET(华轩阳电子)提供。该器件输入为直流驱动的发光二极管(LED),输出为光激励的光电三极管,具有高隔离电压、较大的电流传输比(CTR)以及宽温度工作范围,适用于需要电气隔离与信号传递的多种场合。

二、主要参数

  • 输入类型:DC(LED 驱动)
  • 输出类型:光电三极管(晶体管输出)
  • 正向压降 Vf:1.2V(典型)
  • 正向电流 If(最大):50mA
  • 输出电流(最大):50mA
  • 负载电压(最大):80V
  • 隔离电压 Vrms:3.75kV
  • 输出通道数:1 通道
  • 集—射极饱和电压 VCE(sat):100mV(厂商资料,测试条件标注为 If=20mA、Ic=1mA)
  • 上升/下降时间 tr/tf:4µs / 3µs(典型)
  • 工作温度范围:-55℃ ~ +110℃
  • 电流传输比(CTR):最小 200%,最大/饱和值 400%
  • 封装:SOP-4

三、特点与优势

  • 高隔离强度:3.75kVrms 隔离等级,适合低压侧与高压侧信号隔离,提升系统安全性。
  • 高增益(CTR 高):200%~400% 的 CTR 值意味着较小的 LED 驱动电流即可获得较大的输出电流,利于降低输入功耗。
  • 低饱和电压:VCE(sat) 约 100mV,使输出导通时压降小,能够有效提高传输效率。
  • 宽温度范围与工业级稳定性:-55℃ 至 +110℃,适合工业环境和较严苛场景。
  • 中等开关速度:tr≈4µs、tf≈3µs,适用于多数控制与信号隔离应用,但不建议用于高频高速数据链路。

四、典型应用场景

  • 微控制器与高压电路之间的数字隔离接口
  • 开关电源与电源管理电路中的信号反馈隔离
  • 工业自动化控制信号传输、PLC 接口
  • 低频或中速固态继电器、驱动电路的隔离与驱动放大
  • 各类需要电气隔离与抗干扰的测量与检测模块

五、使用建议与典型设计注意事项

  • LED 限流电阻计算:R = (V驱动 - Vf) / If。例如在 5V 驱动、期望 If=10mA 时:R ≈ (5 - 1.2) / 10mA ≈ 380Ω(取标准值 390Ω)。
  • 根据 CTR 选取驱动电流水平:CTR=200% 意味着 Ic ≈ 2×If。若需要输出 Ic=10mA,则理论上 If≈5mA;为保证裕量,建议留出安全系数。
  • 输出侧通常作为开集电极使用,需外接上拉电阻到合适的 VCC;上拉电阻阻值应根据响应速度和功耗平衡选择。
  • 注意温度、老化对 CTR 的影响:在高温或长时间运行下,CTR 可能下降,应在设计时考虑最小 CTR 值(200%)作为保证值。
  • 由于器件上升/下降时间为微秒级,不适合要求数十或数百千赫以上频率的高速数字信号隔离。

六、可靠性与封装

EL357C 采用 SOP-4 封装,便于表面贴装与自动化生产。器件具有工业级工作温度范围及较高的隔离电压,但在焊接与存储过程中应遵循标准的 ESD 与潮湿敏感器件(MSL)防护规范,推荐按厂商回流焊温度曲线与条件进行装配。

七、采购与替代

品牌:HXY MOSFET(华轩阳电子);封装:SOP-4;单通道晶体管输出光耦。若需更高开关速度、不同封装或继电器驱动能力,可参考市场上同类晶体管输出光耦并比较 CTR、隔离等级与 VCE(sat) 等关键参数以做替代选择。

备注:以上参数基于提供资料汇总,部分测试条件(如 CTR 的具体测量电流与 VCE 条件)未明确标注,实际设计时建议参考完整数据手册并在目标应用条件下进行评估与测试。

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