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HXY MOSFET HESDNC24VB1EL-A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET HESDNC24VB1EL-A
- Type
- HXY MOSFET
- Minimum package
- 3000
Technical parameters
- Electronic Component
- HXY MOSFET
- Electronic Component
- HESDNC24VB1EL-A
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.006g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 26pF
- Electronic Component
- BM0227328541
- Voltage
- 45V
- Current(Ir)
- 100nA
- Voltage(VBR)
- 26V
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HESDNC24VB1EL-A 产品概述
一、产品简介
HESDNC24VB1EL-A 是华轩阳电子（HXY MOSFET）推出的一款单通道、双向瞬态电压抑制（ESD）保护器件。器件针对接口与信号线瞬态过压（如静电放电、脉冲干扰）提供快速钳位与能量吸收能力，用以保护敏感的半导体输入/输出端口，适合空间受限的便携类及消费电子产品。
二、主要电气参数
- 钳位电压（Vc）: 45 V（典型条件下峰值钳位）
- 击穿电压（Vbr）: 26 V
- 反向截止电压（Vrwm）: 24 V
- 峰值脉冲功率（Ppp）: 380 W（10/1000μs 波形条件下）
- 峰值脉冲电流（Ipp）: 9.5 A
- 结电容（Cj）: 26 pF（典型）
- 反向泄漏电流（Ir）: 100 nA（额定电压下）
- 通道数: 单路；极性: 双向；类型: ESD
以上参数表明该器件在保持较低结电容的同时，具备较好的脉冲能量承受能力，适用于对信号完整性有一定要求且需抗干扰保护的场合。
三、封装与热/机械特性
- 封装形式：SOD-323（小体积、适合面贴装）
SOD-323 提供紧凑的安装占位，便于在紧凑的 PCB 布局中靠近被保护节点放置以获得最佳防护效果。注意器件的散热依赖于 PCB 铜箔面积与过孔设计，长时间高能量脉冲应考虑热耗散能力与可靠性保障。
四、典型应用场景
- USB、HDMI、串行接口（UART/I2C/SPI）等数据线保护
- 手机、平板、可穿戴设备的外部接口保护
- 工业控制与通信终端的接口防护
- 任何对信号完整性与低电容要求的低压接口保护
五、使用与布局建议
- 器件应尽量靠近被保护端口放置，缩短 PCB 上的走线长度以降低感性耦合。
- 为提高散热与承受脉冲功率，建议在器件附近预留足够铜箔，并根据需要增加热过孔与地铜。
- 双向器件可直接连接在差分或双向信号线上，无需外加偏置，但需确认工作电压不超过 Vrwm（24 V）。
- 对高速信号，请关注 26 pF 的结电容对上行带宽的影响，必要时评估对信号完整性的影响并调整拓扑或选型。
六、可靠性与测试建议
- 在设计评价阶段，应进行实际 PCB 上的 ESD 与浪涌试验验证，确认钳位电压与残余电压满足系统容限。
- 对于重复高能脉冲场景，建议进行温升与寿命评估，必要时在器件前加串联阻抗或功率分散元件以延长寿命。
七、采购与识别
- 品牌：HXY MOSFET（华轩阳电子）
- 型号：HESDNC24VB1EL-A；封装：SOD-323
在选择与采购时，请确认完整型号与批次，参考官方数据手册以获得更详细的规范与焊接工艺建议。
总结：HESDNC24VB1EL-A 以小体积封装、低电容与较高脉冲能量承受能力，适合对体积与信号性能有要求的接口防护应用。按照上述布局与热管理建议使用，可在多数便携与消费类设备中提供可靠的瞬态过压保护。
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