WMSIC Electronic Components

HXY MOSFET SS1045

ModelSS1045
PackageSMB
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET SS1045
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
SS1045
Electronic Component
1
Package
SMB
Electronic Component
Schottky Diode
Electronic Component
0.148g
Electronic Component
1
Electronic Component
BM0258662219
Current
10A
Diode
Electronic Component
Current(Ir)
1mA
(Vf)
650mV@2A
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SS1045 二极管(SMB 封装)产品概述

一、产品简介

SS1045 是华轩阳电子(HXY MOSFET)推出的一款独立式整流二极管,采用 SMB(DO‑214AA)封装,适用于中低压、高电流的整流和保护场合。器件耐温范围宽(-65℃ 至 +150℃),具有较高的浪涌承受能力,适合工业电源、车载电子和功率转换模块等应用。

二、主要性能参数

  • 正向压降(Vf):约 650 mV @ 2 A
  • 最大直流反向耐压(Vr):45 V
  • 额定整流电流:10 A(平均整流电流,具体条件见厂方数据表)
  • 反向漏电流(Ir):1 mA(典型测量条件可能为 Vr 与温度指定值下)
  • 非重复峰值浪涌电流(Ifsm):250 A(短时冲击能力)
  • 工作结温:-65℃ ~ +150℃
  • 封装:SMB(适合焊接在标准 PCB 上)

三、电气特性解读

  1. 正向压降 650 mV 在 2 A 条件下表现较好,意味着在中等电流下功耗较低,有助于降低散热需求。
  2. 45 V 的反向耐压适合 12 V/24 V 系统的整流和反向保护,但不适合高压直流(>45 V)场合。
  3. 1 mA 的反向电流表明在高温时漏电可能增加,若在高温环境中使用需关注漏电对电路的影响并考虑降温或并联方案。
  4. Ifsm 250 A 说明器件可承受较强的浪涌冲击(如整流桥的输入浪涌或电容充电时的瞬态电流),但具体脉冲宽度和波形需参考完整数据表。

四、封装与热管理建议

SMB 封装体积较小,热阻相对较大。10 A 连续工作时需通过 PCB 良好散热:

  • 在焊盘处扩展大面积铜箔,增加散热层并使用多连接层或散热孔(thermal via)。
  • 置于板上靠近散热器或使用外部散热片,必要时并联多个器件来分担热负载。
  • 在设计时按厂方给出的功耗与结—环境热阻进行电流或温升的热仿真与降额设计。

五、典型应用场景

  • 开关电源、整流桥输出二极管
  • 逆变/驱动电路中的续流与自由轮回路
  • 车载电源与电池管理系统(适用于 12V/24V 系统)
  • 电源保护(反接/浪涌吸收)与瞬态抑制电路

六、使用注意事项与可靠性

  • 反向电压接近 45 V 时应留有裕量,避免长期在极限条件下运行。
  • 反向漏电随温度上升而增加,高温环境需特别注意。
  • Ifsm 为非重复峰值浪涌能力,不宜作为常态冲击承载指标。
  • 焊接与回流参照 SMB 封装的无铅回流规范,避免超出器件允许的焊接温度和时间。
  • 存储与使用环境应避免潮湿与强腐蚀性气氛,以保证长期可靠性。

七、选型与采购提示

订购时确认完整型号 SS1045 与供应商批次,向华轩阳电子获取详细数据手册以核实测试条件(如 Ifsm 的脉冲宽度、Ir 的测试电压与温度、If(AV) 的散热基准等)。在量产导入前建议进行样片测试,包括热循环、浪涌和高温老化以验证在目标应用中的表现。

如需根据具体电路(电流波形、工作温度、散热方案)进行更精细的选型与热设计,我可以帮您做进一步的计算与建议。

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