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HXY MOSFET ZMM8V2
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET ZMM8V2
- Type
- HXY MOSFET
- Minimum package
- 2500 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- ZMM8V2
- Electronic Component
- 1
- Package
- LL-34
- Electronic Component
- Zener Diode
- Electronic Component
- 0.047g
- Electronic Component
- 1
- (Zzk)
- 50Ω
- (Zzt)
- 7Ω
- Electronic Component
- BM0228150204
- Diode
- 1
- Current(Ir)
- [email protected]
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 7.7V~8.7V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ZMM8V2 稳压二极管产品概述
一、产品简介
ZMM8V2 是一款独立式稳压（二极管）器件，标称稳压值 8.2V，适用于小功耗精密基准与浪涌吸收场合。该器件由 HXY MOSFET（华轩阳电子）生产，封装为 LL-34 轴向玻璃封装，结构紧凑、可靠性高，便于通过孔安装与手工或波峰焊接工艺集成。
二、主要电气参数与性能亮点
- 稳压值（标称）：8.2V
- 稳压值允许范围：7.7V ~ 8.7V，满足一般容差要求的参考源应用
- 反向漏电流 Ir：100 nA @ 6.2V，漏电低，适用于高阻抗测量与低功耗电路
- 耗散功率 Pd：500 mW，适合中低功率稳压与钳位用途（需注意散热与功耗限制）
- 动态阻抗 Zzt：7 Ω（在规定测试电流下），低动态阻抗有利于保持稳压精度
- 转折阻抗 Zzk：50 Ω（在转折区条件下），反映低电流区的稳压特性
这些参数表明 ZMM8V2 在中等电流范围内能提供较稳定的电压基准，同时在低电流工况下仍保持较小的漏电。
三、封装与机械特性
- 封装：LL-34（轴向玻璃封装）
- 特点：耐环境污染、引线可焊接，适用于通孔 PCB 布局及原型开发。玻璃封装也利于观察焊接质量与外观检测。
四、典型应用场景与电路建议
适用场景包括：
- 低功耗参考源与基准电压
- 过压保护与瞬态钳位
- 仪表与传感器前端的稳定源
- 小信号放大器偏置电路
使用建议：
- 作为并联稳压器时，计算限流电阻 R = (Vin - Vz) / (Iz + Iload)，并保证在最不利工况下稳态耗散 Pd ≤ 500 mW。例如在 Vin = 12V、Vz ≈ 8.2V、期望驱动 Iz = 5 mA 时，R ≈ 760 Ω。
- 在高温或高电流工况下应做功率降额和散热评估，避免器件长期在 Pd 极限附近工作。
五、可靠性与注意事项
- 由于为玻璃封装，焊接时遵循制造商的温度曲线和时间限制，避免过热导致封装裂纹或性能退化。
- 长时间在高功耗点工作会影响可靠性，应保持安全裕度并考虑热管理。
- 低电流区（接近击穿转折）时电压可能受温度与工况影响，关键参考场合建议采取温度补偿或稳定工作电流。
六、选型与采购要点
选择时关注实际应用的最大工作电流、环境温度与稳压精度要求。HXY MOSFET（华轩阳电子）提供的 ZMM8V2 在成本与性能之间具备良好平衡，适合通用电子产品、小家电、测控与通信终端的辅助稳压需求。采购时确认包装、批次与测试条件以确保一致性。
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