WMSIC Electronic Components

HXY MOSFET IRF7316TRPBF-HXY

ModelIRF7316TRPBF-HXY
PackageSOP-8
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET IRF7316TRPBF-HXY
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
IRF7316TRPBF-HXY
Electronic Component
1
Package
SOP-8
Electronic Component
2 P
Type
P
Electronic Component
MOSFET
Electronic Component
Electronic Component
Electronic Component
0.114g
Electronic Component
1
Electronic Component
BM0263440605
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.6W
Gate Voltage(Vgs)
±20V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF7316TRPBF-HXY 产品概述

一、产品简介

IRF7316TRPBF-HXY 是华轩阳电子(HXY)提供的一款双通道 P 沟道功率 MOSFET,采用 SOP-8 封装。器件为两颗并列封装的 P 沟道场效应管,适合用于电源路径控制、背到背开关、低侧/高侧负载切换和电池管理等场景。器件设计兼顾了低导通损耗与标准驱动兼容性,便于表面贴装生产与散热处理。

二、主要电气参数(典型)

  • 通道数量:2 个 P 沟道
  • 漏源电压 Vdss:30 V
  • 连续漏极电流 Id:5.3 A
  • 导通电阻 RDS(on):85 mΩ @ Vgs = 4.5 V(典型)
  • 耗散功率 Pd:2.6 W(封装限制)
  • 阈值电压 Vgs(th):约 3 V @ Id = 250 µA(以绝对值计)
  • 总门极电荷 Qg:60 nC @ Vgs = 10 V(测试条件)
  • 封装:SOP-8,适配常规贴片工艺

三、主要特性与优势

  • 双通道集成:SOP-8 内集成两颗 P 沟道 MOSFET,节省 PCB 面积并简化布局与连线。
  • 中等导通电阻:85 mΩ 在 4.5 V 驱动下可提供较低的导通损耗,适合中等电流场合的开关与电源管理。
  • 驱动兼容性:门极电荷 60 nC 在标准栅极驱动器电流下易于驱动,但在高速开关时需注意驱动能力与开关损耗。
  • 30 V 耐压等级:适配典型 12 V/24 V 系统的高侧开关与电池保护应用。

四、典型应用场景

  • 高侧负载开关与反向保护
  • 电池管理与电源路径切换(便携设备、电动车周边模块)
  • DC-DC 转换器中的同步开关或旁路开关(注意驱动策略)
  • 通用功率控制与保护电路

五、选用与布板建议

  • 散热:封装 Pd 约 2.6 W,实际散热能力受 PCB 铜箔面积与过孔影响,建议在器件下方和相邻区域布置足够铜箔并使用散热过孔以降低结温。
  • 驱动:由于阈值电压约 3 V,实际开通需保证足够栅极电平(以绝对值计),建议根据系统驱动电压选择合适的驱动器,控制开关速度以平衡开关损耗与 EMI。
  • 并联与保护:多通道并联使用时应注意电流均流和热不均问题;必要时加入小阻抗或热检测进行保护。
  • PCB 布局:尽量缩短电流回路路径,优化漏源等散热路径,门极走线要远离高速开关回路以减少耦合。

六、结论

IRF7316TRPBF-HXY 为一款面向中低功率电源管理与开关应用的双通道 P 沟道 MOSFET,结合 SOP-8 小封装和 30 V 耐压,适用于需要双通道集成、尺寸受限且对导通损耗有一定要求的设计。选择时请综合考虑导通电阻、门极驱动能力及散热设计,以确保长期可靠运行。若需更详细的电气特性曲线与封装资料,建议联系供应商索取 Datasheet。

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