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HXY MOSFET 15N10
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET 15N10
- Type
- HXY MOSFET
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- 15N10
- Electronic Component
- 1
- Package
- TO-252-2L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.466g
- Electronic Component
- 1
- Electronic Component
- BM0259228404
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 17W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
15N10 产品概述
一、产品简介
15N10是华轩阳电子（HXY）生产的一款高性能N沟道金属氧化物半导体场效应管（MOSFET），具备优秀的电气特性，广泛应用于各种电子设备中的功率控制与功率转换场合。该元器件封装为TO-252-2L，适合在高频和高温环境下工作，能够满足现代电子产品对性能和效率的高要求。
二、电气特性
导通电阻：15N10具有低导通电阻，典型值为115mΩ，测试条件为10V。这意味着在通电状态下，器件可以有效地降低功耗，提高能量转换效率，从而在电源管理系统、驱动电路和电机控制等应用中彰显其优势。
最大漏极-源极电压：该MOSFET的最大额定漏极-源极电压为100V，适合中高压场合的应用。这一特性使得15N10在工作时具有较强的耐压能力，能够有效防止因过电压引发的故障。
最大漏极电流：该器件的最大漏极电流达到15A，充分满足电子设备在高负载条件下的需求。这为1.5kW功率级别的设备提供了良好的支持，特别适用于电源变换和电机驱动等应用场合。
控制阈值电压：建议使用10V的栅极驱动电压来达到最佳性能，确保MOSFET在开启时以最小的阻尼损失工作，从而提高整体系统的运行效率。
三、封装与散热性能
15N10采用TO-252-2L的封装形式，其设计旨在提升散热性能。TO-252封装由于其较大的表面面积和良好的热传导特性，可以有效地散发MOSFET工作过程中的热量，从而避免因过热导致的性能下降或器件损坏。此外，TO-252的引脚排列设计方便焊接，适合自动化生产和手工元器件更换，具有很好的适应性。
四、应用领域
15N10广泛应用于以下领域：
开关电源：由于其低导通电阻及高电流承受能力，15N10非常适合用于开关电源的主开关器件，提高功率转换效率，减小能量损耗。
电机驱动：在电机驱动场合，15N10可用于高频PWM信号的开关控制，确保电机在不同负载情况下运行平稳，系统稳定。
电力电子设备：该MOSFET可用于逆变器、整流器等电力电子设备中，提升整体转换效率，降低谐波损失。
汽车电子：在电动汽车及其相关设备中，15N10也显示出优越的适应性，能够承受严苛环境下的电流和电压变化。
五、总结
总的来说，15N10是一款性能优越、功能多样化的N沟道MOSFET，凭借其低导通电阻、高电流与电压承受能力，适用于多种需求的场合。无论是在工业控制、消费电子，还是在汽车电子领域，都能为用户提供高效可靠的解决方案。华轩阳电子的15N10，凭借其卓越的设计理念与优良的材料特性，定能为现代电子设备的发展提供强有力的支持。
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