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HXY MOSFET DSS34
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET DSS34
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- DSS34
- Electronic Component
- 1
- Package
- SOD-123FL
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.038g
- Electronic Component
- 1
- Electronic Component
- BM0257677128
- Current
- 3A
- Diode
- Electronic Component
- Current(Ir)
- 100uA@40V
- (Vf)
- 550mV
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DSS34 产品概述
一、产品简介
DSS34 是华轩阳电子（HXY MOSFET）推出的一款独立式肖特基二极管，封装为 SOD-123FL。凭借低正向压降和快速恢复特性，该器件适合中小功率整流与电源保护应用，在开关电源、车载电源及功率路径管理等场景具有良好性价比。
二、主要特性
- 二极管类型：肖特基（独立式）
- 典型正向压降（Vf）：约 0.55 V（测试条件详见规格书）
- 直流反向耐压（Vr）：40 V
- 正向整流电流（If）：3 A（连续）
- 反向漏电流（Ir）：100 μA @ 40 V
- 非重复峰值浪涌电流（Ifsm）：80 A
- 工作结温范围：-65 ℃ 到 +150 ℃
- 封装：SOD-123FL（表面贴装，低轮廓）
三、电气参数要点
- 低 Vf 有助于降低整流损耗，提升效率，特别在 3A 等级的输出整流或电源回路中优势明显。
- 反向漏电随温度上升显著增加，需在高温环境中评估待机和待机功耗。
- 80A 的单次浪涌能力适合吸收开机突发电流或短时浪涌，但不宜长期以浪涌频繁工作为常态。
四、封装与引脚标识
SOD-123FL 外形小巧，适配细间距贴片工艺，便于高密度 PCB 布局。器件两端分别为阳极与阴极，封装表面通常有阴极标记（请以出厂实物或数据手册标识为准），支持常见回流焊流程，便于量产装配。
五、典型应用
- 开关电源次级整流
- 电池管理与续流保护（反向保护、功率路径）
- 车载电子（车载电源整流、保护电路）
- 快速恢复需求的整流与去耦场合
六、设计与使用建议
- 散热：尽管小封装可承载 3A 连续电流，但需考虑 PCB 铜箔面积及散热路径，以降低结温并保证长期可靠性。
- 反向漏电：在高温或高阻抗回路中，100 μA 的漏电可能影响待机性能，应评估并采取必要防护。
- 浪涌管理：Ifsm 为非重复峰值，应避免频繁浪涌；必要时配合限流或浪涌抑制元件。
- 布局：阴极标记方向需与电路方向一致，优化热回路并尽量减小引线寄生电感以降低开关噪声。
七、可靠性与选型提示
DSS34 适用于需要低压降、快速响应且空间受限的功率整流场合。选型时请结合工作电流、导通损耗、环境温度及反向漏电容忍度，必要时参考完整数据手册并做实测验证。对于要求更低漏电或更高耐压的场合，可考虑同类更高规格的肖特基器件。
如需更详细的特性曲线、典型波形或封装尺寸图，请参考厂商数据手册或联系华轩阳电子技术支持。
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