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HXY MOSFET SD103AWS
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET SD103AWS
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- SD103AWS
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0227249446
- Current
- 350mA
- Diode
- Electronic Component
- Current(Ir)
- 5uA@30V
- (Vf)
- 600mV@200mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SD103AWS 产品概述
一、概述
SD103AWS 是华轩阳电子（HXY MOSFET）推出的一款独立式肖特基二极管，采用 SOD-323 小型贴片封装。器件具有低正向压降和较低反向漏电流的特点，适合小电流快速整流与反向保护场合。其设计目标是在有限空间内提供高效率的开关与整流性能。
二、主要参数
- 二极管类型：肖特基二极管（独立式）
- 正向压降：Vf = 600 mV @ IF = 200 mA
- 直流反向耐压：Vr = 40 V
- 平均整流电流：IO = 350 mA
- 反向漏电流：IR = 5 μA @ Vr = 30 V
- 封装：SOD-323（表面贴装）
三、性能特点
- 低正向压降：在中低电流工作点（如 100–200 mA）下，较低的 Vf 有利于降低导通损耗，提高能效。
- 快速恢复与低反向漏电：肖特基结构决定了快速响应和较小的反向恢复时间，IR 在 30 V 时仅 5 μA，适用于低功耗应用。
- 小尺寸封装：SOD-323 体积小，便于高密度 PCB 布局，但热容有限，需注意散热设计。
- 适用电压范围：40 V 反向耐压满足常见通信、工业与消费类电源轨保护需求。
四、典型应用
- 电源反接与整流保护（便携设备、充电器、适配器小功率支路）
- 二次侧低压快速整流（开关电源辅助电路）
- 信号线与接口的反向极性保护（USB、UART 等）
- 低功耗便携电子设备的电源路径管理
五、封装与使用建议
- 封装为 SOD-323，适合自动贴装与回流焊接；推荐遵循器件提供商或行业通用的 SOD-323 回流温度曲线进行焊接。
- 由于封装热阻较大，长期接近或超过标称整流电流时需考虑 PCB 散热（加大铜箔、铺铜或热通孔）及降低环境温度。
- 在可能的瞬态电压场景下，配合旁路电容或浪涌抑制器件使用，以保护器件不过压。
六、可靠性与选型注意事项
- SD103AWS 适合持续中低电流场景，若应用中有长时间高电流或高功率耗散，应选用更大封装或并联方案并进行热仿真验证。
- 选型时注意工作电压裕量，反向耐压为 40 V，不宜在高于此值的环境中直接使用。
- 进行 PCB 设计与样机测试时，请按华轩阳电子的规格书和测试条件核实关键参数，以确保在目标工作条件下满足可靠性要求。
如需封装尺寸、典型 V–I 曲线或器件寿命/环境测试数据，可进一步提供型号规格书以便详细评估。
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