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HXY MOSFET SS16
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET SS16
- Type
- HXY MOSFET
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- SS16
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.09g
- Electronic Component
- 1
- Electronic Component
- BM0227691801
- Current
- 1A
- Diode
- Electronic Component
- Current(Ir)
- 500uA
- (Vf)
- 700mV@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS16（SMA）肖特基二极管 产品概述
一、产品简介
SS16 为华轩阳电子（HXY MOSFET）推出的独立式肖特基整流二极管，封装为 SMA（DO-214AC），额定整流电流 1A，直流反向耐压 60V。该器件针对需低正向压降和快速恢复特性的电源应用而设计，常用作整流、反向保护与续流保护元件。
二、主要参数（典型值）
- 型号：SS16（封装：SMA，独立式）
- 正向压降 Vf：0.7V @ 1A
- 直流反向耐压 Vr：60V
- 最大整流电流 If(ave)：1A
- 峰值非重复浪涌电流 Ifsm：30A
- 反向漏电流 Ir：500 μA（随温度上升增大）
- 结温工作范围：-55 ℃ ~ +150 ℃
三、产品特点与优势
- 低正向压降：在 1A 工作条件下 Vf≈0.7V，可显著降低整流损耗，提升效率。
- 快速响应：肖特基结构使恢复时间极短，适合开关电源、DC-DC 转换器等高速应用。
- 抗浪涌能力：30A 单次脉冲浪涌能力，可承受启动或短时过载冲击。
- 宽温度范围：-55℃~+150℃ 的工作结温，适合工业级环境。
四、典型应用场景
- 开关电源二次整流与续流二极管
- 电池充电器与电源管理模块的反向保护
- 汽车电子、通信设备的隔离与保护（注意反向漏电与温升）
- 小功率太阳能、LED 驱动与模块级整流
五、设计与使用建议
- 热管理：在 1A 恒流下功耗约为 Vf×If ≈0.7W，SMA 封装对散热依赖 PCB 铜箔与焊盘，建议增大散热铜箔并保持良好热通路。
- 温度与漏电：反向漏电随结温上升显著增加，若在高温或高电压工况使用，要考虑漏电对电路的影响并留有裕量。
- 浪涌保护：若系统可能出现频繁或超大浪涌，建议增设限流器件或选用更高 Ifsm 器件，或并联多只二极管（注意均流问题）。
- 焊接与可靠性：遵循制造商焊接曲线与 IPC 标准，避免超过推荐峰值温度；存储和回流时防潮防污染以保证可靠性。
六、选型与采购提示
- 若系统工作电压或反向电压接近 60V，应留有安全裕量，或选用更高 Vr 等级。
- 对于更低正向压降或更高电流需求，可考虑并联或选用不同封装（如 SMAF、SMB）及更高 If 规格产品。
- 采购时请索取华轩阳电子最新版数据手册以确认完整电气参数、曲线与封装尺寸，以及批次可靠性与出货信息。
如需具体电气曲线、封装尺寸图或样片评估建议，可提供工作电压、最大入口电流与工作环境温度，便于推荐最合适的使用与布板方案。
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